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Focus ring, carrier and reaction chamber

A technology of carrying device and focus ring, which is applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of high etching rate and poor etching angle, and achieve the effect of solving high etching rate and poor etching angle

Active Publication Date: 2021-08-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a focus ring, a carrying device and a reaction chamber, which can simultaneously solve the high etching rate and the etching angle difference in the annular edge region of the substrate The problem

Method used

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  • Focus ring, carrier and reaction chamber
  • Focus ring, carrier and reaction chamber
  • Focus ring, carrier and reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] figure 2 A partial structural schematic diagram of the focus ring and the reaction chamber of the carrying device provided for the application of the embodiment of the present invention; please refer to figure 2 , the embodiment of the present invention provides a focus ring 10, which is sleeved on the outer peripheral wall of the chuck 20 for carrying the substrate S. The focus ring 10 includes an upper ring part 101, a middle ring part 102 and a lower ring stacked in sequence from top to bottom. Part 103; the inner wall of the middle ring part 102 is vertical to the upper surface of the lower ring part 103, and the inner diameter of the lower ring part 103 is smaller than the inner diameter of the middle ring part 102, so that the bottom edge of the substrate S can be placed on the lower ring part 103 relative to the middle ring part 102 On the upper surface where the inner wall protrudes; the angle between the inner wall of the upper ring part 101 and the lower sur...

Embodiment 2

[0041]The embodiment of the present invention also provides a carrying device, please refer to figure 2 , the carrying device includes a chuck 20, a focus ring 10, a base ring 30 and a chuck base 40, wherein the chuck 20 and the focus ring are used to carry the substrate together, specifically, the chuck 20 is preferably an electrostatic chuck, The substrate is fixed by electrostatic adsorption; the focus ring 10 is sleeved on the side wall of the chuck 20 , and the focus ring 10 adopts the focus ring provided in Embodiment 1 above.

[0042] The chuck 20 is installed on the chuck base 40, the base ring 30 is sleeved on the lower half of the chuck 20 and the outside of the side wall of the chuck base 40, the focus ring 10 is sleeved on the upper half, and the focus ring is located on the base. Ring 30 on.

[0043] The assembly process of the carrying device is: first install the chuck 20 on the chuck base 40, then set the base ring 30 on the lower part of the chuck 20 and the...

Embodiment 3

[0046] Embodiments of the present invention also provide a reaction chamber, such as figure 2 As shown, it includes a carrying device, the carrying device adopts the carrying device provided in the above-mentioned embodiment 2, and the carrying device is arranged in the chamber.

[0047] The reaction chamber provided by the embodiment of the present invention can improve the process quality because the carrying device provided by the above-mentioned embodiment 2 is used.

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Abstract

The present invention provides a focus ring, which is sleeved on the outer peripheral wall of a chuck for carrying a substrate. The focus ring includes an upper ring part, a middle ring part and a lower ring part stacked in sequence from top to bottom; the inner wall of the middle ring part The upper surface of the lower ring part is vertical, and the inner diameter of the lower ring part is smaller than the inner diameter of the middle ring part, so that the bottom edge of the substrate can be placed on the upper surface protruding from the inner wall of the lower ring part relative to the middle ring part; The included angle between the lower surfaces of the upper ring part is an acute angle, so that the equipotential line of the electric field above the upper surface of the substrate tends to be straight; the upper surface of the upper ring part is higher than the upper surface of the substrate, and the height difference between the two is first distance. The invention also provides a carrying device and a reaction chamber, which can simultaneously solve the problems of high etching rate and poor etching angle in the annular edge region of the substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a focus ring, a carrying device and a reaction chamber. Background technique [0002] Plasma devices are widely used in the manufacturing process of integrated circuits (IC) or MEMS devices. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the substrate Various physical and chemical reactions occur on the surface of the material, and the surface properties of the material are changed. It can not only alternately deposit multi-layer materials on the substrate surface, but also etch multi-layer materials on the substrate surface. [0003] Figure 1a For a schematic diagram of the existing internal structure of the chamber, please refer to Figure 1a , including: an electrostatic chuck 1, a focus ring 2, the electrostatic chuck 1 fixes th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
Inventor 郭士选苏恒毅
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD