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Magnetic material sputtering target and method for manufacturing same

A magnetic material and manufacturing method technology, applied in sputtering coating, sputtering coating, magnetic layer coating, etc., to achieve the effects of cost improvement, improved characteristics, and abnormal discharge suppression

Active Publication Date: 2019-06-04
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in these conventional technologies, there is still room for further improvement in the form and dispersion form of oxides in the target, and a sputtering target that can more effectively suppress abnormal discharge and prevent the generation of particles is desired.

Method used

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  • Magnetic material sputtering target and method for manufacturing same
  • Magnetic material sputtering target and method for manufacturing same
  • Magnetic material sputtering target and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (Example 1, Comparative Example 1)

[0060] Co powder with an average particle size of 3 μm, Pt powder with an average particle size of 3 μm, and Cr powder with an average particle size of 3 μm are prepared as raw material powders for metal components, and B with an average particle size of 1 μm is prepared. 2 o 3 Powder, TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 Powder, Cr with an average particle size of 1 μm 2 o 3 Powder, CoO powder with an average particle diameter of 1 μm was used as the raw material powder of the oxide component. These powders were weighed to obtain the following molar ratio compositions. The composition is shown below.

[0061] Composition: 70Co-4Cr-10Pt-4B 2 o 3 -2TiO 2 -2SiO2 2 -2Cr 2 o 3 -6CoO mole%

[0062] Next, in Example 1, TiO 2 Powder, SiO 2 Powder The two oxide powders were mixed, and the mixed powder was heat-treated. The heat treatment was performed at 1050° C. for ...

Embodiment 2

[0067] (Example 2, Comparative Example 2)

[0068] Co powder with an average particle size of 3 μm and Pt powder with an average particle size of 3 μm are prepared as raw material powders for metal components, and B with an average particle size of 1 μm is prepared. 2 o 3 Powder, TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 The powder is used as the raw material powder of the oxide component. These powders were weighed to obtain the following molar ratio compositions. The composition is shown below.

[0069] Composition: 65Co-20Pt-5B 2 o 3 -5TiO 2 -5SiO 2 mol%

[0070] Next, in Example 2, TiO as the raw material powder of the oxide component 2 Powder, SiO 2 Powder The two oxide powders were mixed, and the mixed powder was heat-treated. The conditions of the heat treatment are the same as in Example 1. The heat-treated oxide powder is first cooled to room temperature by furnace cooling, and then used in the subsequ...

Embodiment 3

[0073] (Example 3, Comparative Example 3)

[0074] Co powder with an average particle size of 3 μm and Cr powder with an average particle size of 3 μm are prepared as raw material powders for metal components, and B with an average particle size of 1 μm is prepared. 2 o 3 Powder, TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 The powder is used as the raw material powder of the oxide component. These powders were weighed to obtain the following molar ratio compositions. The composition is shown below.

[0075] Composition: 65Co-20Cr-5B 2 o 3 -5TiO 2 -5SiO 2 mol%

[0076] Next, in Example 3, TiO 2 Powder, SiO 2 Powder The two oxide powders were mixed, and the mixed powder was heat-treated. The conditions of the heat treatment are the same as in Example 1. The heat-treated oxide powder is first cooled to room temperature by furnace cooling, and then used in the subsequent mixing process. On the other hand, in Compara...

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Abstract

A magnetic material sputtering target including an oxide having a melting point of 500 deg c or lower, the magnetic material sputtering target being characterized in that the average number density ofoxides having a particle diameter of 10 um or greater in a sputtering surface of the sputtering target is 5 / mm2 or lower. The present invention addresses the problem of providing a sputtering targetand a method for manufacturing the same, whereby the generation of particles or abnormal electric discharge caused by oxides in the sputtering target, particularly coarsely grown oxides, can be reduced.

Description

technical field [0001] The present invention relates to a magnetic material sputtering target suitable for forming a magnetic thin film such as a recording layer of a magnetic recording medium, for example, a particle film of a magnetic recording medium of a hard disk using a perpendicular magnetic recording system, and particularly relates to a magnetic material sputtering target capable of suppressing sputtering Abnormal discharge during sputtering, magnetic material sputtering target for preventing particle generation, and manufacturing method thereof. Background technique [0002] In magnetic recording media such as hard disks, a material formed by thinning a magnetic material on a substrate such as glass is used as the magnetic recording layer. From the viewpoint of high productivity, direct current (DC) is widely used to form the magnetic recording layer. Magnetron sputtering method for power supply. The magnetron sputtering method is a method in which a magnet is arr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34G11B5/851
CPCC23C14/34G11B5/851
Inventor 古谷祐树
Owner JX NIPPON MINING & METALS CO LTD