Multi-chip integrated power amplification module internally matched with gallium nitride

Abstract

The invention relates to the field of microwave power devices, and provides a multi-chip integrated power amplification module internally matched with gallium nitride, aiming to solve a problem that matching outside a tube shell cannot realize high power output. The multi-chip integrated power amplification module comprises an input microstrip line, a gallium nitride tube core chip I, a power allocation microstrip line, a gallium nitride tube core chip II, a gallium nitride tube core chip III, an output microstrip line, a DC bias circuit, an impedance compensation circuit, and a bottom plate,wherein an input signal passes the input microstrip line, the gallium nitride tube core chip I and the power allocation microstrip line in sequence, then reaches the gallium nitride tube core chip IIand the gallium nitride tube core chip III, and is output by the output microstrip line finally; power pins of the three chips are all connected with an external power supply through the DC bias circuit, a line from input to output is provided with the impedance compensation circuit, and the gallium nitride tube core chip I, the gallium nitride tube core chip II, the gallium nitride tube core chipIII, the input microstrip line, the power allocation microstrip line and the output microstrip line are all arranged on the bottom plate. The multi-chip integrated power amplification module internally matched with gallium nitride is suitable for high-power integrated power amplification.

Description

technical field [0001] The invention relates to the field of microwave power devices, in particular to a power amplification module. Background technique [0002] In recent years, microwave power devices have transitioned from silicon bipolar transistors, field effect transistors, and LDMOS transistors, which are widely used in the field of mobile communications, to wide bandgap power transistors represented by silicon carbide (SiC) and gallium nitride (GaN). . Due to its high breakdown voltage, high linear performance, high efficiency and other advantages, GaN power tubes have been widely used in wireless communication base stations, radio and television, radio stations, jammers, high-power radars, electronic countermeasures, satellite communications and other fields. prospects for use. In system applications, many application requirements such as broadband, miniaturization, low cost, general-purpose devices, and modular design are proposed for power tubes. In order to i...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: to overcome the problem that the existing external matching method cannot obtain high power output, and to propose an internally matched nitride-married multi-chip integrated power amplifier module

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