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Semiconductor device and manufacturing method thereof, wearable device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of poor integration and high cost, and achieve the effects of low production cost, high production efficiency and high integration

Active Publication Date: 2021-11-09
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The display screen and sensing unit are manufactured independently and assembled later, which will inevitably lead to poor integration and high cost.

Method used

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  • Semiconductor device and manufacturing method thereof, wearable device
  • Semiconductor device and manufacturing method thereof, wearable device
  • Semiconductor device and manufacturing method thereof, wearable device

Examples

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Embodiment Construction

[0070] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0071] One embodiment of the present invention provides a method for manufacturing a semiconductor device, comprising:

[0072] A sensing unit 10 and a display unit 20 are formed on a transparent substrate, wherein the display unit 20 is formed to include a red light-emitting diode, a first green light-emitting diode, and a blue light-emitting diode, and the sensing unit 10 is formed to include a second a green light emitting diode and a photodiode configured to receive light from the second green light emitting diode,

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PUM

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Abstract

The invention discloses a semiconductor device, a manufacturing method thereof, and a wearable device. A specific embodiment of the semiconductor device includes: a transparent substrate; a sensing unit and a display unit formed on the substrate, wherein the display unit includes a red light-emitting diode, a first green light-emitting diode and a blue light-emitting diode, and the sensing unit includes A second green light-emitting diode and a photodiode, the photodiode is configured to receive light from the second green light-emitting diode, wherein the red light-emitting diode includes a red light-emitting layer and its anode and transparent cathode; the blue light-emitting diode includes a blue light-emitting layer and Its anode and cathode; the first green light-emitting diode and the second green light-emitting diode respectively include a green light-emitting layer and its anode and cathode. The manufacturing process of this embodiment is simple, the manufacturing efficiency is high, and the manufacturing cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductors. More specifically, it relates to a semiconductor device, a manufacturing method thereof, and a wearable device. Background technique [0002] At present, many wearable devices have the function of heart rate detection. Taking smart watches or smart bracelets as an example, the principle of heart rate detection is: blood is red, it will reflect red light and absorb green light. Between heartbeats, the blood flow in the wrist increases, and more green light is absorbed. Based on this, the smart watch uses the green light emitted by the green light-emitting diode (LED) to irradiate the wrist, and then uses the photodiode to sense the green light reflected by the wrist, and judges the heartbeat by judging the amount of green light reflection, thereby detecting the heart rate. The display shows the heart rate detection result. [0003] The structure of the existing smart watch with heart rat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00G01N21/27
Inventor 孙双
Owner BOE TECH GRP CO LTD