Method for preventing metal fuse from being excessively etched

Abstract

The invention provides a method for preventing a metal fuse from being excessively etched. The method comprises the steps of providing a metal fuse, and depositing an interlayer film on the metal fuse; forming a top metal layer on the interlayer film, wherein titanium nitride layers are respectively arranged on an upper surface and a lower surface of the top metal layer; etching the top metal layer, and forming a bonding pad and a protection pattern arranged above the metal fuse; defining an etching window above the bonding pad and the protection pattern after a passivation layer is deposited;and etching according to the etching window to remove titanium nitride on an upper surface of the bonding pad, leftwards and rightwards opening the windows in the metal fuse to release a product generated by burnout of the metal fuse when a lower-layer fuse is protected by using the protection pattern as a mask. By the method, the metal fuse is protected, the windows are also formed in the metalfuse, the cost is reduced, meanwhile, the metal layer at a lower layer is protected, windows are formed in a left edge and a right edge of the metal fuse, and the product generated by burnout of the metal fuse is conveniently released and is prevented from being gathered in an original place to for short circuit.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for preventing metal fuses from being over-etched. Background technique [0002] In the semiconductor manufacturing process, the passivation layer on the metal fuse will be opened. Since there are certain requirements for the thickness of the silicon dioxide passivation layer on the metal fuse, it is generally defined by a layer of photolithography. , and then etched separately. Such as Figure 1a as shown, Figure 1a A schematic diagram showing the definition of a metal fuse region for one photolithography in the prior art. There are welding pads 01 and metal fuses 05 in the passivation layer and interlayer film 02, photoresist 03 is suspended above the welding pads 01 and metal fuses 05, and the etching window 04 is first opened above the metal fuses . Figure 1b Schematic diagram showing the definition of pad areas for one pass lithography in the prior art. ...

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of method that avoids metal fuse from being over-etched, for solving the problem in the prior art due to the rate ratio of etching titanium nitride than passivation layer and layer The slow speed of interfilm silicon dioxide leads to the problem that the thickness of silicon dioxide above the metal fuse cannot be guaranteed

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