Ion filtering methods and associated ion filtering system

一种离子过滤、等离子体的技术，应用在颗粒分离器管的零部件、放电管、射束/射线聚焦/反射装置等方向，能够解决没有任何内容提供益处等问题

Active Publication Date: 2019-06-14
PLASMA THERM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Nothing in the prior art provides the concomitant benefits of the present invention

Method used

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  • Ion filtering methods and associated ion filtering system
  • Ion filtering methods and associated ion filtering system
  • Ion filtering methods and associated ion filtering system

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Embodiment Construction

[0047] The present invention provides several method embodiments for using ion filtering to adjust the amount of ions delivered to a substrate. All method embodiments of the present invention have a processing chamber operably connected to a plasma source, wherein the substrate is placed on a substrate support provided within the processing chamber. All method embodiments of the present invention can have a substrate further comprising a semiconductor wafer on a tape on a frame. All method embodiments of the present invention generate plasma using a plasma source for processing substrates in a processing chamber.

[0048] In all of the method embodiments described herein, when the orifice plate is divided into two or more physically separated regions that can be individually biased, the biasing voltage can be Adjusting to different levels adjusts the degree of ion filtration more or less in different regions, thereby individually adjusting the number of ions passing through t...

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Abstract

The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate (170). The method comprising a process chamber (100) being provided that is operatively connected to a plasma source (120). The substrate is provided on a substrate support (130) that is provided within the process chamber. An electrical bias source is provided that is operativelyconnected to an aperture plate (190,191,192) that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to commonly owned US Provisional Patent Application No. 62 / 424,360, filed November 18, 2016, and entitled Ion Filter, which is incorporated herein by reference. technical field [0003] The invention relates to the field of charged particle sources, including plasma sources for direct etching and deposition, broad beam ion sources for ion beam deposition and etching, and electron sources for surface modification. Background technique [0004] Plasma processing apparatus for etching silicon wafers and other substrates or depositing various materials onto various substrates can be very efficient for the production of semiconductor devices and other related systems. In its basic form, a plasma is generated in the source region from a suitable precursor gas that forms positive ions, electrons and neutral radicals of the gas. At the wafer, for the etching process, a more chemical etching mai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01L21/78H01J37/32357H01J37/32422H01J37/32577H01J37/32633H01J37/32871H01J3/14H01J49/02G01T1/28
Inventor 莱斯利·迈克尔·莱亚林内尔·马丁内斯迈克尔·摩根鲁塞尔·韦斯特曼
Owner PLASMA THERM
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