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Method for manufacturing split-gate flash memory and split-gate flash memory

A manufacturing method and memory technology, applied in the manufacture of split-gate flash memory, in the field of split-gate flash memory, capable of solving problems such as programming failure of split-gate flash memory

Active Publication Date: 2021-04-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for manufacturing a split-gate flash memory and a split-gate flash memory, so as to solve the problem that the split-gate flash memory is prone to programming failure

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  • Method for manufacturing split-gate flash memory and split-gate flash memory
  • Method for manufacturing split-gate flash memory and split-gate flash memory
  • Method for manufacturing split-gate flash memory and split-gate flash memory

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Embodiment Construction

[0041] The method for manufacturing the split-gate flash memory and the split-gate flash memory proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0042] The present invention provides a method for manufacturing split-gate flash memory, referring to figure 1 , figure 1 It is a process flow chart of the manufacturing method of the split-gate flash memory according to the embodiment...

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Abstract

The present invention provides a method for manufacturing a split-gate flash memory. Firstly, a substrate is provided, and a structural layer is formed on the substrate, and a first groove is formed in the structural layer. forming a sidewall structure on the sidewall; then forming a tunnel oxide layer on the bottom wall of the first trench, the sidewall structure and the structural layer, and filling the first trench to form a shared word line ; then cleaning the surface of the shared word line and removing the portion of the tunnel oxide layer located on the structural layer, and oxidizing the shared word line to form an oxide material layer on the shared word line; finally cleaning The material layer is oxidized to obtain a word line oxide layer with a specific thickness. The word line oxide layer formed in this way has good uniformity and density, which avoids the situation that the shared word line is etched incorrectly when the floating gate and the control gate are etched subsequently, so that the electric field in the shared word line transistor is The intensity distribution is normal, which guarantees the programming validity.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a split-gate flash memory and a split-gate flash memory. Background technique [0002] In the development of existing memory, the split-gate flash memory has become an important non-volatile memory. The split-gate flash memory uses the floating gate as the storage unit, and the floating gate performs F-N electron tunneling and channel hot electron injection. Programming and erasing, when programming, channel hot electrons are injected into the floating gate, and the channel is in a blocking state, and the state is "0" at this time; when erasing, through F-N electron tunneling, the channel is in an open state, this state "1". Split-gate flash memory is widely used for its high-efficiency programming and large-area rapid erasing and writing capabilities. [0003] The split-gate flash memory sharing a word line is one of the split-gate flash memor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/04
Inventor 曹启鹏王卉陈宏杨辉曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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