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Preparation method of precious metal compound and application thereof

A technology of precious metals and compounds, applied in the field of material science

Inactive Publication Date: 2019-06-18
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a preparation method and application of noble metal compounds for current problems

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  • Preparation method of precious metal compound and application thereof
  • Preparation method of precious metal compound and application thereof
  • Preparation method of precious metal compound and application thereof

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Embodiment Construction

[0043]In order to make the purpose, technical solution and advantages of the present application clearer, the preparation method and application of the noble metal compound provided by the present application will be further described in detail below with reference to the drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0044] The traditional method of growing noble metal compounds includes: directly selenizing the surface of the noble metal platinum Pt(111) substrate to generate PtSe 2 Thin film; PtSe grown by heat-assisted method 2 Thin films; PtSe grown by molecular beam epitaxy 2 Thin films; PtSe grown by chemical vapor deposition 2 Thin films and PtTe 2 thin film or from PtSe 2 PtSe obtained by mechanical exfoliation on bulk materials 2 The thin layer is then transferred to the substrate.

[0045] None of the above methods can achieve ...

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Abstract

The application relates to the field of materials science, and in particular to a preparation method of a precious metal compound and an application thereof. The preparation method of the precious metal compound includes the following steps of: providing a substrate, and depositing a precious metal film on the surface of the substrate to form a first intermediate product with a flat surface; and performing a selenization reaction or a tellurization reaction on the surface of the first intermediate product to form a precious metal compound. The structural formula of the precious metal compoundis AB or AB2, wherein A is one or more of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium, and B is a selenium element or a tellurium element. The precious metal compound prepared by the method can break away from the limitations of substrate materials in the preparation of the precious metal compound in the prior art. That is, the method can prepare the precious metal compound on any substrate material. In addition, the method can produce a large-sized precious metal compound, and the size of the precious metal compound can meet the needs of industrial applications.

Description

technical field [0001] The present application relates to the field of material science, in particular to a preparation method and application of a noble metal compound. Background technique [0002] Layered transition metal dichalcogenides have attracted the attention of many researchers due to their interesting physical properties and potential applications in optoelectronic and spintronic devices. In recent years, research on transition metal sulfides has been extended to common semiconductor compounds, such as MoS 2 、MoSe 2 or WSe 2 , in addition to metallic Group X metal sulfides such as PtTe 2 or PtSe 2 . PtTe 2 or PtSe 2 Has good electrical properties. [0003] However, the traditional preparation of PtTe 2 or PtSe 2 Thin-film methods are still in the laboratory stage, and cannot directly and batch-prepare large-sized PtTe 2 or PtSe 2 film. To further advance PtTe 2 , PtSe 2 For the research and practical application of this kind of materials, there is ...

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Application Information

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IPC IPC(8): H01L21/02H01L29/22H01L31/0296B01J27/057
Inventor 周树云张柯楠王猛王源于浦
Owner TSINGHUA UNIV
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