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Groove-gate bipolar transistor with low EMI noise

A bipolar transistor and trench gate technology, which is applied in the fields of electric solid state devices, semiconductor devices, semiconductor/solid state device components, etc., can solve the problems of increasing the electromagnetic interference noise of the device, affecting the reliability of the device, and large induced electromotive force. , to achieve the effect of reducing electromagnetic noise interference, reducing process cost, and reducing process difficulty

Active Publication Date: 2019-06-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Claims
  • Application Information

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Problems solved by technology

However, this method will increase the dV / dt and dI / dt when the device is turned on, thereby generating a large induced electromotive force, increasing the electromagnetic interference (EMI) noise of the device, and affecting the reliability of the device

Method used

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  • Groove-gate bipolar transistor with low EMI noise
  • Groove-gate bipolar transistor with low EMI noise
  • Groove-gate bipolar transistor with low EMI noise

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing, the technical scheme of the present invention is described in detail:

[0015] A trench-gate bipolar transistor with low EMI noise, the structure of which is as follows figure 1 shown; including a collector structure, a drift region structure, a hole barrier layer structure, an emitter structure and a trench gate structure; the collector structure includes a metallized collector 1 and a P on the upper surface of the metallized collector 1 collector region 2; the drift region structure includes an N buffer layer 3 and an N drift region layer 4 located on the upper surface of the N buffer layer 3, and the N buffer layer 3 is located on the upper surface of the P collector region 2; the empty The hole barrier layer structure is composed of a carrier storage (CS) layer 12, a P region 5 and an N region 6, the hole barrier layer structure is located on the upper surface of the drift region, the P region 5 and the N region 6 The...

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Abstract

The invention belongs to the technical field of semiconductor devices and particularly relates to a groove-gate bipolar transistor with low EMI noise. According to the main scheme, based on a conventional carrier storage groove-gate bipolar transistor (CSTBT) structure, a hole barrier layer structure is introduced into a device and placed between a drift region structure and an emitter structure;all regions of the hole barrier layer structure are shallow junction structures which can be formed through an epitaxial technology and also can be formed through an ion implantation or diffusion technology, and the length and width dimensions and doping concentration of the structures can be designed according to actual device performance requirements; and when the device is started, the device forms a transverse hole barrier layer nearby the bottom of a gate through exhaustion of a transverse P / N junction, so that the charging function of a hole current on a gate capacitor is greatly weakened, the gate control capability of the device is greatly enhanced, and meanwhile electromagnetic interference noise of the device is lowered. Therefore, the groove-gate bipolar transistor has both extremely low electromagnetic interference (EMI) noise and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a trench gate bipolar transistor (Trench Insulated Gate Bipolar Transisitor, TIGBT for short) with low EMI noise. Background technique [0002] High-voltage power semiconductor devices are an important part of power electronics, and have a wide range of applications in fields such as motor drives in power systems and frequency conversion in consumer electronics. The traditional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as: IGBT) has been widely used due to its excellent performance in the field of medium and high voltage power electronics. However, there is a compromise optimization between energy consumption parameters such as turn-on energy consumption, turn-on energy consumption and turn-off energy consumption for IGBTs. H.Takahashi et al proposed a new trench gate IGBT structure-CSTBT structure for the first time on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L23/552
Inventor 陈万军许晓锐王方洲刘超张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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