Unlock instant, AI-driven research and patent intelligence for your innovation.

Zwitterion compounds and photoresists comprising same

A technology of photoresist and zwitterion, which is applied in the field of zwitterion compounds and can solve the problems of large resist exposure time and so on

Pending Publication Date: 2019-06-25
ROHM & HAAS ELECTRONICS MATERIALS LLC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, one of the major issues in EUVL imaging is resist sensitivity, the lower the sensitivity, the higher the source power required or the longer the exposure time needed to fully expose the resist

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zwitterion compounds and photoresists comprising same
  • Zwitterion compounds and photoresists comprising same
  • Zwitterion compounds and photoresists comprising same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0120] Example 1: Te-Zwitterion Synthesis:

example 1A

[0121] Example 1A: The reactions describing the synthesis of the zwitterionic compound designated DTTe-HPTFBS (4) are shown in Scheme 1 below (after Example 1B). The synthesis of compound 1 is described in Naddaka, V.I. et al. Zhurnal Organicheskoi Khimii, 23(4), 887-8; 1987. The synthesis of Compound 2 is described in U.S. Patent Application Publication No. US20120172555A1 by Coley et al. A solution of compound 1 (3.0 g, 7.17 mmol) and compound 2 (1.50 g, 7.20 mmol) in 20 mL of acetonitrile was stirred at room temperature for 16 hours. The reaction mixture was concentrated and poured into heptane to give the product, named DTTe-HPTFBS (4). This zwitterion (4) can be used as a photoacid generator in a photoresist composition.

example 1B

[0122] Example 1B: A reaction describing the synthesis of a zwitterionic compound designated DTTe-HPPrS (5) is shown in Scheme 1 below. The synthesis of compound 1 is described in Naddaka, V.I. et al. Zhumal Organiccheskoi Khimii, 23(4), 887-8;1987. A solution of compound 1 (3.0 g, 7.17 mmol) and compound 3 (0.87 g, 7.17 mmol) in 20 mL of acetonitrile was stirred at room temperature for 16 hours. The reaction mixture was concentrated and poured into heptane to give DTTe-HPPrS (5). This zwitterion (5) can be used as a photoacid generator in a photoresist composition.

[0123]

[0124] plan 1

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Description

technical field [0001] The present invention relates to zwitterionic compounds. In a preferred aspect, photoactive tellurium salt compounds are provided, which are useful in extreme ultraviolet lithography. Background technique [0002] Extreme ultraviolet lithography ("EUVL") is one of the main technology options to replace optical lithography for high-volume semiconductor fabrication with feature sizes < 20nm. The extremely short wavelength (13.4nm) is a key enabler of the high resolution required for multiple generations of technology. Furthermore, the overall system concept - scanning exposure, projection optics, mask format and resist technology - is very similar to that used in current optical technologies. Like previous generations of lithography, EUVL consists of resist technology, exposure tool technology and mask technology. The main challenges are EUV source power and throughput. Any improvement in EUV power supplies will directly impact the current stringe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C07C395/00C07D345/00G03F7/027G03F7/004
CPCC07F11/00G03F7/0045G03F7/0397C07C395/00C07D345/00G03F7/20H01L21/0274G03F7/16G03F7/70033G03F7/027G03F7/0042
Inventor E·阿卡德J·F·卡梅伦J·W·萨克莱
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC