A hole-digging acid additive and its application for reducing the difference of suede surface after polycrystalline black silicon texturing

An additive, polysilicon technology, applied in the direction of polycrystalline material growth, treatment, crystal growth, etc., can solve the problems of the uniformity of the sub-micron suede structure, the appearance of polycrystalline black silicon solar cells and the efficiency of components, etc. The effect of obvious reduction, speed reduction, and reduction of surface energy difference

Active Publication Date: 2021-07-02
DONGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a hole-digging acid additive that reduces the difference in the suede surface after polycrystalline black silicon is made, and overcomes the large differences in the regions of different crystal plane orientations in the prior art, resulting in submicron suede. The uniformity of the structure is affected, which affects the appearance of polycrystalline black silicon solar cells and the defects of module efficiency

Method used

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  • A hole-digging acid additive and its application for reducing the difference of suede surface after polycrystalline black silicon texturing
  • A hole-digging acid additive and its application for reducing the difference of suede surface after polycrystalline black silicon texturing
  • A hole-digging acid additive and its application for reducing the difference of suede surface after polycrystalline black silicon texturing

Examples

Experimental program
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Effect test

Embodiment 1

[0080] (1) The specific process steps of pre-cleaning:

[0081] Step 1: In the acid and alkali tank according to concentrated H 2 SO 4 (95wt%): H 2 o 2 (30wt%) volume ratio is 3:1 configuration reaction solution;

[0082] Step 2: immerse the polysilicon wafer in the above reaction solution and boil for 30 minutes;

[0083] Step 3: configure 2wt% HF solution in the acid and alkali resistant tank;

[0084] Step 4: Submerge the polysilicon wafer in the above HF solution for 300s;

[0085] (2) Concrete process steps of coarse alkali throwing:

[0086] Step 1: configure a KOH solution with a concentration of 9wt% in the acid and alkali resistant tank;

[0087] Step 2: Heat the solution to 80°C;

[0088] Step 3: immerse the polysilicon wafer in the above KOH solution and react for 210s;

[0089] (3) Specific process steps of silver plating:

[0090] Step 1: Configure 0.6wt% HF and 1.4×10 -3 wt% AgNO 3 The mixed reaction solution;

[0091] Step 2: immerse the polysilicon...

Embodiment 2

[0110] On the basis of embodiment 1, the difference is:

[0111] In the concrete process step of described hole digging, the hole digging etchant is made of 10wt% H 2 o 2 , 4wt% HF and 1wt% hole-digging acid additive;

[0112] The hole-digging acid liquid additive is composed by weight percentage: 1 wt% of polyoxyethylene lauryl ether, 1.2 wt% of tartaric acid, 0.8 wt% of sodium alginate, 1 wt% of aspartic acid, and 2 wt% of triethylene glycol %, diethylene glycol monomethyl ether 1wt%, ultrapure water 93wt%.

[0113] Finally, the appearance photo of polycrystalline black silicon is as follows: Figure 7 As shown, it can be seen that the use of polycrystalline black silicon pore-digging additives for texturing can effectively improve the crystal flower problem, the color difference between crystal planes with different orientations is small, and the textured surface is uniform. Such as Figure 8 As shown, a submicron meter-scale hemispherical texture is formed on the surf...

Embodiment 3

[0115] On the basis of embodiment 2, the difference is:

[0116] In the specific process steps of digging, the digging time is 180s;

[0117] In the specific process steps of hole expansion, the hole expansion time is 160s.

[0118] The finally obtained polycrystalline black silicon looks like Figure 11 As shown, the use of polycrystalline black silicon pore-digging additives for texturing can effectively solve the problem of crystal cracks after polycrystalline silicon texturing, and there is no difference in the texture of grains with different crystal orientations. Such as Figure 12 As shown, the surface SEM image of the polycrystalline black silicon prepared in Example 3 shows that the pore diameter of the polycrystalline black silicon after texturing is between 650 and 850 nm. Such as Figure 13 As shown, it can be seen from the SEM image of the polycrystalline black silicon section prepared in Example 3 that the submicron hole depth is between 350-600 nm. Such as ...

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Abstract

The invention relates to a hole-digging acid liquid additive for reducing the difference of the textured surface of polycrystalline black silicon and its application. 0.5-2wt% of sodium nitrate, 1-3wt% of aspartic acid, 1-5wt% of triethylene glycol, 0.5-1wt% of diethylene glycol monomethyl ether, and 86.5-96wt% of ultrapure water. The present invention controls the hole depth and aperture of submicron holes by adjusting the process parameters of digging time and hole expansion time, so that the textured surface structure and reflectivity are more in line with the performance requirements of polysilicon solar cells, which is beneficial to subsequent processes and improving polysilicon solar energy. The conversion efficiency of the battery is beneficial.

Description

technical field [0001] The invention belongs to the field of hole-digging additives and applications thereof, and in particular relates to a hole-digging acid liquid additive for reducing the difference of suede surface after polycrystalline black silicon texturing and its application. Background technique [0002] In the field of solar cells, crystalline silicon solar cells have always occupied more than 85% of the market share. Cost reduction and efficiency improvement are the two major goals of crystalline silicon solar cells. Optical loss directly affects the photoelectric conversion efficiency of solar cells. The micron-scale worm-like structure prepared by the traditional polycrystalline silicic acid texturing process on the diamond wire-cut polysilicon has a high reflectivity, and black silicon can achieve low surface reflectivity due to its submicron geometric structure, making crystalline silicon solar cells net efficiency is improved. [0003] Black silicon solar ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B33/10H01L31/0236
CPCY02E10/50
Inventor 张青红冯贵标柳杉隋阳沈轩宇黄治国侯成义李耀刚王宏志
Owner DONGHUA UNIV
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