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Complete non-volatile logic implementation method based on unipolar memristor and application of complete non-volatile logic implementation method

An implementation method, unipolar technology, applied in the direction of instruments, static memory, digital memory information, etc., can solve the problems of single function, poor non-volatile logic completeness, etc.

Active Publication Date: 2019-07-09
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the current problems of poor completeness and single function of non-volatile logic based on memristors, the present invention provides a complete non-volatile logic implementation method based on unipolar memristors and an application example of high-efficiency XOR logic, which can effectively Alleviate the problems of poor reconfigurability, poor completeness, low efficiency and simple functions in the current implementation of non-volatile logic using memristors

Method used

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  • Complete non-volatile logic implementation method based on unipolar memristor and application of complete non-volatile logic implementation method
  • Complete non-volatile logic implementation method based on unipolar memristor and application of complete non-volatile logic implementation method
  • Complete non-volatile logic implementation method based on unipolar memristor and application of complete non-volatile logic implementation method

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Embodiment 1

[0058] Taking the realization of NAND logic function as an example, the specific steps of realizing basic Boolean logic function based on unipolar memristor are described. A total of three steps are required to realize the NAND logic function, including one-step initialization and two-step logical operation, such as image 3 shown. Step 1: Initialize by applying the voltage "T 1 =V op,r ,T 2 = 0" to initialize the unipolar memristor to a high-impedance state, that is, "Z' = 0", and then start the logic operation step. op,s " as the input variable "1"; step 2: put "T 1 = p, T 2 =1" respectively applied to both ends of the device to realize not-p logic (NOTp); Step 3: put "T 1 =q, T 2 =1" are respectively applied to both ends of the device to realize NAND logic (p NAND q). Expressions (5)-(7) respectively provide the logical expressions corresponding to each step:

[0059] Z step1 =0 (5)

[0060] Z step2 =TRUE·Z step1 +(T 1 XOR T 2 ) NOT Z step1

[0061] =TRUE·0+...

Embodiment 2

[0066]Here is an example to specifically illustrate how to use the unipolar memristive cross array to realize the calculation of the Hamming distance. When calculating the Hamming distance of two 16-bit binary numbers "1111001100101100" and "0010100110101001", it is necessary to perform an exclusive OR (XOR) operation on the two, that is, "1111001100101100 XOR 0010100110101001", and the result is the binary number "binary 1101101010000101", The number of "1"s (8) in the result is the Hamming distance between the two. Such as Figure 4 As shown in (a), a 16×16 unipolar memristor cross array is required to realize the above process, and only 16 unipolar memristors on any diagonal line in the array are used in the realization process, here Diagonal 1 is selected to illustrate the operation method. The 16 unipolar memristors on the diagonal are named U in sequence from bottom left to top right 16 , U 15 ,...U 3 , U 2 , U 1 ; where the unipolar memristor U i The upper and l...

Embodiment 3

[0068] Here is an example to specifically illustrate how to use the unipolar memristive cross array to realize symmetric encryption and decryption. Wherein, the key is generated according to the randomness of the high-resistance states of different cycle-to-cycle cycles of the unipolar memristor. Specifically, the high-resistance state resistance (R HRS,i ) and the high-impedance state resistance of the last cycle (R HRS,i-1 ) for comparison, where i≥1. If "R HRS,i -R HRS,i-1 ≥0", the i-th bit of the key is "1", otherwise the i-th bit is "0".

[0069] The ASCII code is one of the most widely used character sets. Here, the ASCII code "01010000" of the capital letter "P" is encrypted and decrypted, and the key used is "00000111". To complete the exclusive OR (XOR) operation of 8-bit binary numbers requires an 8×8 unipolar memristive cross-array. Since they all perform parallel XOR operations, the entire logical operation process is basically the same as calculating the Hamm...

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Abstract

The invention provides a complete non-volatile logic implementation method based on a unipolar memristor and application of the complete non-volatile logic implementation method. A single unipolar memristor is a basic logic unit. By defining the input variable '1' in two ways, 16 kinds of complete Boolean logic functions can be realized in three steps by utilizing a single unipolar memristor, so that the efficiency is greatly improved, the circuit area is saved, and the realization of more complicated logic functions can be facilitated due to high logic completeness. Based on high efficiencyof the XOR logic of the invention, an unipolar memristor array is used for realizing an operation function containing an XOR logic gate such as application of Hamming distance, symmetric encryption and decryption, common arithmetic operation and like. A secret key used for encryption and decryption can be generated randomly through fluctuation of inherent parameters of the memristor, hardware of the whole encryption and decryption process is achieved, safety is improved, and software expenditure is reduced.

Description

technical field [0001] The invention belongs to the field of new computing technologies, and in particular relates to a method for realizing a complete non-volatile logic based on a unipolar memristor and an application thereof. Background technique [0002] The non-volatile logic integrating storage and calculation can avoid frequent data transmission in the process of information processing and effectively alleviate the von Neumann bottleneck problem. It is a new type of computing architecture with great development prospects. As a resistive switch with memory effect, the resistance of memristor can be kept stably after power off, so it has natural non-volatile characteristics. If the high and low resistance of the memristor represent logic "0" and "1", respectively, non-volatile logic operations can be realized naturally. In addition to non-volatile characteristics, memristors have incomparable advantages in implementing logic operations due to their simple structure, co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0069G11C2013/0071G11C2013/0083
Inventor 杨玉超徐丽莹袁锐黄如
Owner PEKING UNIV
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