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A display device and its manufacturing method

A technology for display devices and quantum dots to emit light, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as carrier injection imbalance, low efficiency and lifespan

Active Publication Date: 2021-09-14
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a display device and its preparation method, aiming to solve the problem of low efficiency and lifespan of existing display devices due to unbalanced carrier injection

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  • A display device and its manufacturing method
  • A display device and its manufacturing method

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preparation example Construction

[0029] An embodiment of the present invention provides a method for manufacturing a display device, which is used to prepare a display device corresponding to the previous embodiment.

[0030] Specifically, when the prepared display device is a positive structure device, the preparation method includes the following steps:

[0031] Step S11: Provide a prefabricated device, and deposit red quantum dots, green quantum dots, and blue quantum dots on the prefabricated device to form a quantum dot light-emitting layer.

[0032] In the embodiment of the present invention, the provided prefabricated device may include a substrate, an anode, and the quantum dot luminescent layer is deposited on the anode; or include a substrate, an anode, and a hole functional layer, and the quantum dot luminescent layer is located on the hole functional layer, The hole functional layer may be at least one of a hole injection layer and a hole transport layer.

[0033] Step S12: Depositing a composite...

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Abstract

The invention belongs to the field of display devices and provides a display device and a preparation method thereof. The display device provided by the present invention introduces a modification layer consisting of BiOI as the inner core and a PMMA composite material between the quantum dot luminescent layer and the cathode. On the one hand, BiOI has the characteristics of a narrower band gap (~1.8eV). , can absorb visible light to the greatest extent, so that electrons transition from the valence band to the conduction band, generating electron-hole pairs; on the other hand, BiOI has a unique layered structure, so that the corresponding atoms and atomic orbitals have enough space to be polarized , can effectively realize the separation of photogenerated electron-hole pairs; at the same time, BiOI is an indirect band gap compound, and the excited electrons cannot directly return to the valence band, which inhibits the recombination of electrons and holes; and the PMMA shell can effectively The photo-generated electrons with lower energy are blocked and the photo-generated electrons with higher energy escape, so that the device can adjust the electron injection efficiency, balance the electrons and holes, and improve the efficiency of the device.

Description

technical field [0001] The invention belongs to the field of display devices, in particular to a display device and a preparation method thereof. Background technique [0002] Quantum dot materials have the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, high quantum yield, etc., and can be used in printing process preparation, so quantum dot-based light-emitting diodes (Quantum Dot Light Emitting Diode, QLED ) has received widespread attention recently, and its device performance indicators have also developed rapidly. [0003] At present, although the efficiency and lifespan of existing QLED devices have been greatly improved through the improvement of quantum dot materials and the continuous optimization of the structure of QLED devices, their efficiency is still far from the requirements of industrial production. Among them, the unbalanced carrier injection is a main reason affecting the device efficiency of QLEDs. Fo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/50
CPCH10K59/12H10K50/115H10K50/14H10K50/157
Inventor 李龙基曹蔚然
Owner TCL CORPORATION
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