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Piezoresistive biaxial motion sensor and manufacturing method thereof

A motion sensor, piezoresistive technology, applied in the direction of using electric/magnetic devices to transmit sensing components, piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric effect/electrostrictive or magnetostrictive motors, etc. , can solve the problems of high temperature coefficient, large residual stress, etc., and achieve the effect of solving large residual stress and realizing isolation design

Pending Publication Date: 2019-07-12
艾托姆(北京)汽车零部件有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] This application provides a piezoresistive dual-axis motion sensor and its manufacturing method to solve the problems of large residual stress and high temperature coefficient caused by packaging in the prior art

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  • Piezoresistive biaxial motion sensor and manufacturing method thereof
  • Piezoresistive biaxial motion sensor and manufacturing method thereof
  • Piezoresistive biaxial motion sensor and manufacturing method thereof

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0021] It should be noted that if there are directional indications (such as up, down, left, right, front, back...) in the embodiment of the present application, the directional indications are only used to explain the position in a certain posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0022] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the...

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Abstract

The invention provides a piezoresistive biaxial motion sensor and a manufacturing method thereof, and the piezoresistive biaxial motion sensor comprises an SOI silicon wafer which comprises a first monocrystalline silicon layer, a first silicon oxide layer, and a second monocrystalline silicon layer; a first etching groove and a second etching groove which are formed in one side, close to the first silicon oxide layer, of the second monocrystalline silicon layer; a mass block which is formed on the second monocrystalline silicon layer and is formed between the first etching groove and the second etching groove; a doping layer which is formed on one side, deviating from the first silicon oxide layer, of the second monocrystalline silicon layer; a second silicon dioxide layer formed on the second monocrystalline silicon layer and the doped layer; a welding layer formed on the second monocrystalline silicon layer and the doping layer and formed in the second silicon dioxide layer; and anisolation groove formed in one side, far away from the mass block, of the second etching groove; wherein the isolation groove, the mass block, the first etching groove and the second etching groove are formed at the same time. In this way, the residual stress and the temperature coefficient caused by packaging can be reduced.

Description

technical field [0001] The present application relates to the technical field of micro-electro-mechanical systems, in particular to a piezoresistive dual-axis motion sensor and a manufacturing method thereof. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS, Micro-Electro-Mechanical System), also known as micro-electro-mechanical systems, micro-systems, micro-machines, etc., refers to high-tech devices with a size of a few millimeters or even smaller. MEMS is developed on the basis of microelectronics technology (semiconductor manufacturing technology), and integrates high-tech electronic machinery produced by technologies such as lithography, corrosion, thin film, LIGA, silicon micromachining, non-silicon micromachining and precision machining. device. [0003] MEMS is a micro-device or system that integrates micro-sensors, micro-actuators, micro-mechanical structures, micro-power sources, signal processing and control circuits, high-performance electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81B7/02B81C1/00G01D5/16
CPCB81B7/0045B81B7/02B81C1/00015B81C1/00325G01D5/16B81B2201/02
Inventor 辛胜男陈浩
Owner 艾托姆(北京)汽车零部件有限公司
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