Single crystal synthetic diamond material via chemical vapour deposition

A diamond and single crystal technology, applied in the field of synthesis of single crystal CVD synthetic diamond material layers

Pending Publication Date: 2019-07-16
ELEMENT SIX TECH LTD
View PDF21 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it was found that if co-dopants such as boron or silicon were introduced into the synthesis process together with nitrogen, it was possible to produce colorless or near-colorless single crystal CVD diamond material at nitrogen levels that would otherwise result in a brown color

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single crystal synthetic diamond material via chemical vapour deposition
  • Single crystal synthetic diamond material via chemical vapour deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] As described in the Summary of the Invention section of this specification, the key to the realization of the present invention is the provision of methods which achieve a single crystal CVD diamond product material with high nitrogen content and low strain and birefringence.

[0029] exist figure 1 The basic method is described in . In step 1, the substrate 10 is machined to a desired geometry and surface finish. Machining includes grinding to the desired thickness and then polishing to the desired surface roughness and flatness. Such machining produces surface and subsurface damage 12 to the growth surface of substrate 10 . Such surface and subsurface damage 12 can nucleate dislocations and generate strain in single crystal CVD diamond material grown on such surfaces. Therefore, in step 2 an etching method is applied to the growth surface 10 of the substrate to remove this damage. While this etching method removes surface and subsurface damage, it also causes pits...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A single crystal CVD diamond material is disclosed, the material comprising a total nitrogen concentration of at least 3 ppm as measured by secondary ion mass spectrometry (SIMS); and a low optical birefringence such that in a sample of the single crystal CVD diamond material having an area of at least 1.3 mm * 1.3 mm, and measured using a pixel size of area in a range 1 * 1 [mu]m2 to 20 * 20 [mu]m2, a maximum value of deltan[average] does not exceed 1.5 * 10<-4>, where deltan[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness. A method of making the material is also disclosed.

Description

technical field [0001] The present invention relates to single crystal chemical vapor deposited (CVD) synthetic diamond material and in particular to the synthesis of layers of single crystal CVD synthetic diamond material containing large amounts of nitrogen dopants. Background technique [0002] During the 1980s and 1990s, many studies involving the synthesis of single crystal CVD diamond materials were carried out by various groups around the world. Much of this work discloses growing thin layers of single crystal CVD diamond material by homoepitaxial growth on single crystal diamond substrates. While there is a desire to produce relatively thick layers of high quality single crystal CVD synthetic diamond material, this has proven difficult to achieve in practice. The synthesis of single crystal CVD diamond material requires extreme conditions which need to be created and then maintained in a stable manner for long periods of time in order to successfully grow thick laye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/04
CPCC30B25/02C30B29/04C30B25/00C30B25/025C30B25/16C30B28/04C30B29/68C30B25/186C30B33/12C30B25/20
Inventor M·L·马卡姆A·M·埃德蒙斯H·K·迪隆D·W·哈德曼
Owner ELEMENT SIX TECH LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap