Compensation method for precision deviation of wafer stage of defect observation equipment

Abstract

The invention relates to a method for compensating for the deviation of the accuracy of a wafer carrier for defect observation equipment, and relates to a semiconductor chip manufacturing process, including transmitting a defect position information file to a defect observation device end; the defect observation device detects defects in the defect position information file , and combined with its own defect automatic classification function in the defect detection process to screen the defects that meet the accuracy conditions of the collected wafer stage, and generate a defect database that meets the accuracy conditions of the collected wafer stage; divide the wafer into multiple wafers The precision offset monitoring area of ​​the round stage collects the offset vector of the wafer stage during the defect detection process for the defects falling in the monitoring area in the defect database, and establishes the offset vector database of the wafer stage; if the defect detection process If the defect exceeds the detection window, the defect observation equipment will automatically calibrate according to the offset vector of the wafer carrier in the monitoring area where the defect is located in the offset vector database of the wafer carrier, so as to ensure the normal production of the wafer.

Description

Technical field [0001] The present invention relates to a semiconductor chip fabrication process, and more particularly to a compensation method of a defect observation device crystal circular load set precision offset. Background technique [0002] In the semiconductor chip manufacturing process, the defect detection is essential, and very critical in the semiconductor chip manufacturing process, and the yield of the semiconductor chip can be improved by defect detection, reducing production costs. [0003] Among them, the defect detection scanning electron microscope plays an important role in analyzing defects, reducing defects, and raising the improvement of the improvement. However, with the development of the integrated circuit process, the key size is increasing, the defect detection scanning electron microscope visual observation window (FOV, Field of View, FOV1 represents 1um * 1 um view window) must shrink, increase the magnification, to observe Clear defect. However, w...

AI Technical Summary

Problems solved by technology

However, while increasing the magnification, the requirements for the accuracy of the defect detection SEM wafer stage are also increased. Otherwise, the defect will easily fall out of the detection window, which will greatly reduce the efficiency and accuracy of defect image detection.

Images