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A kind of triaxial magnetic sensor and preparation method thereof

A sensor and three-axis magnetic technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, instruments, measuring magnetic variables, etc., can solve the problems of complex process, low yield rate, high cost, etc., and achieve simplified process steps, The effect of improving yield rate and reducing production cost

Active Publication Date: 2021-03-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

However, the process is more complicated, the yield rate is lower, and the cost is higher

Method used

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  • A kind of triaxial magnetic sensor and preparation method thereof
  • A kind of triaxial magnetic sensor and preparation method thereof
  • A kind of triaxial magnetic sensor and preparation method thereof

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preparation example Construction

[0043] A kind of preparation method of traditional triaxial magnetic sensor comprises the following steps:

[0044] Such as Figure 1a As shown, step S11 is first performed to provide a CMOS device wafer 10, on which a dielectric layer 12 is formed, and the CMOS device wafer 10 includes a first top metal layer 11a and a second top metal layer Layer 11b.

[0045] Such as Figure 1b As shown, step S12 is then performed to form a first groove 13a and a second groove 13b in the dielectric layer 12, the groove bottom of the first groove 13a exposes the first top metal layer 11a, so The bottom of the second groove 13b exposes the second top metal layer 11b.

[0046] Such as Figure 1c As shown, step S13 is then performed to sequentially form the first barrier film layer 20, the magnetic material film layer 30, the protective film layer 40 and the second barrier film layer 50, and the first barrier film layer 20 covers the crystal of the CMOS device. The circle 10, the groove bo...

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Abstract

The present invention provides a three-axis magnetic sensor and a preparation method thereof. In the preparation method of the three-axis magnetic sensor, after forming a Z-axis magnetoresistance structure, the Z-axis magnetoresistance structure is used as a mask to etch the The groove bottom of the first groove and the groove bottom of the second groove, to expose the groove bottom of the second groove, this step replaces the formation of the original photoresist after forming the Z-axis magnetoresistive structure , patterning the photoresist, etching the bottom of the second groove with the patterned photoresist as a mask, removing the photoresist, etc., which saves the patterned photoresist The required mask plate reduces the production cost, simplifies the process steps of forming the three-axis magnetic sensor, and also solves the problem of bridging the protective layer at the bottom of the first groove, thereby improving the yield rate.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a three-axis magnetic sensor and a preparation method thereof. Background technique [0002] Micro-Electro-Mechanical-System (MEMS) is a new technology that integrates microelectronics technology and mechanical engineering. Compared with traditional semiconductor devices, MEMS devices have many advantages, such as small size, low cost, and high degree of integration. In recent years, they have been gradually used in various sensors, for example. [0003] The anisotropic magnetoresistance (Anisotropic Magneto Resistive, AMR) effect refers to the phenomenon that the resistivity of a ferromagnetic material changes with the change of its own magnetization and the angle between the current direction. MEMS devices based on AMR have the characteristics of high sensitivity, good thermal stability, low material cost, and simple manufacturing process, and have become t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00G01R33/09
CPCB81B7/02B81B2201/02B81C1/00023G01R33/096
Inventor 王俊杰徐爱斌
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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