Synthesis method of ZnS/CdZnS/ZnS blue light quantum dot

A synthesis method and quantum dot technology, applied in chemical instruments and methods, nano optics, luminescent materials, etc., can solve the problems of low yield of blue light quantum dots, poor photostability, etc., to avoid fluorescence quenching, improve Effects of Fluorescence Yield and Fluorescence Quantum Yield Improvement

Inactive Publication Date: 2019-07-23
NANCHANG HANGKONG UNIVERSITY
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Problems solved by technology

[0003] At present, the existing researches all involve CdSe red light and green light quantum dots or quantum dot light-emitting diodes based on CdSe red light or green light. Due to the limitation of energy level structure, blue light quantum dots cannot be synthesized by CdSe. The present invention is a A synthetic method for prepari

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[0020] Example 1

[0021] The synthesis method of ZnS / CdZnS / ZnS blue quantum dots includes:

[0022] Step 1: Synthesis of precursors

[0023] Cd(OA) 2 Precursor: Add cadmium oxide, oleic acid (OA) and octadecene (1-ODE) in a three-necked flask, heat up to 150 ℃, pump for half an hour, then pass in argon gas and heat up to 250 ℃ to stop the reaction, and get the mole The concentration is 0.1 mmol / ml cadmium oleate precursor;

[0024] Zn (OA) 2 Precursor: Add zinc oxide, oleic acid (OA) and octadecene (1-ODE) in a three-necked flask, heat up to 150 ℃, pump for half an hour, then pass in argon gas and heat up to 250 ℃ to stop the reaction, and get 0.1 mmol / ml zinc oleate precursor;

[0025] TOPS precursor: 0.5 mmol S powder was dissolved in 5 ml tri-n-octyl phosphine and dissolved at 80°C under stirring to obtain 0.1 mmol / ml precursor.

[0026] Step 2: Synthesis of ZnS core

[0027] Add 9 mL of octadecene (1-ODE) and 0.6 mL of zinc oleate precursor to a three-necked flask, raise the temper...

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Abstract

The invention provides a synthesis method of a ZnS/CdZnS/ZnS blue light quantum dot. Firstly, an oil-phase ZnS quantum dot is synthesized by utilizing a zinc source precursor and an S source precursorthrough a high-temperature thermal injection method; then, a ZnS quantum dot nucleus is obtained through purification; next, the ZnS quantum dot nucleus is coated with a CdZnS luminous shell layer and a ZnS inorganic modification layer through an epitaxial growth method; finally, the ZnS/CdZnS/ZnS blue light quantum dot is obtained through purification. According to the synthesis method of the ZnS/CdZnS/ZnS blue light quantum dot, materials with different bands are prepared through changing the thickness of different CdZnS layers, and ideal quantum yield is obtained through regulating the thickness of the luminous layer; the thickness of the middle luminous layer is selected to be synthesized under 300 DEG C, so that the crystal lattice fitness between the ZnS nucleus and the CdZnS luminous layer can be relieved; a CdZnS coherence strain layer can be crystallized well; the fluorescent quantum yield of the quantum dot is obviously improved along with the coating of the ZnS shell layer;meanwhile, flicker can be inhibited, and the quantum dot fluorescent yield is high.

Description

technical field [0001] The invention relates to a synthesis method of ZnS / CdZnS / ZnS blue light quantum dots, specifically belonging to the technical field of luminescent materials. Background technique [0002] Colloidal semiconductor nanocrystals have narrow luminescence spectra and high photoluminescence quantum yields, and have attracted extensive attention for applications in displays, lasers, and solar cells. However, many hole and electron defect states are formed on the surface of quantum dots, which affect the luminescent properties of quantum dots. There are two main ways to passivate the surface state of quantum dots and increase the luminous efficiency and photochemical stability of quantum dots: one is to modify the surface of quantum dots with organic ligands; the other is to coat the surface of quantum dots with an inorganic shell. Generally, the shell material can act as a passivation layer to reduce the dangling bonds on the surface, while a thick inorganic ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/56B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/02C09K11/565B82Y20/00B82Y30/00B82Y40/00
Inventor 杨文学赵文天张芹邹时兵张余宝黎芳芳秦元成
Owner NANCHANG HANGKONG UNIVERSITY
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