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Micro-electromechanical piezo-resistive pressure sensor with self-test capability and corresponding manufacturing process

一种力传感器、自测试的技术，应用在测量流体压力、通过电磁元件测量流体压力、测量力等方向，能够解决响应大、达不到高满量程值、不适使用等问题

Active Publication Date: 2019-07-23
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these sensors suffer from certain disadvantages, including greater nonlinearity in response, dependence on moisture that may develop between capacitor plates, and the possibility of not achieving high full-scale values, at least in a given application field, this may not be appropriate for their use

Method used

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  • Micro-electromechanical piezo-resistive pressure sensor with self-test capability and corresponding manufacturing process
  • Micro-electromechanical piezo-resistive pressure sensor with self-test capability and corresponding manufacturing process
  • Micro-electromechanical piezo-resistive pressure sensor with self-test capability and corresponding manufacturing process

Examples

Experimental program
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Embodiment Construction

[0046] As will be explained in detail below, one aspect of this solution envisages providing a self-test structure in a microcomputer voltage resistance pressure sensor, which is designed to operably cooperate with the sensing structure of the same pressure sensor so as to Implement a self-test procedure for the operation of the same sensing structure.

[0047] First refer to figure 1 with figure 2 Now, a microcomputer voltage resistance type pressure sensor designated by 1 as a whole according to an embodiment of the solution will be described.

[0048] The pressure sensor 1 includes a monolithic body 2 consisting of a compact and uniform area of ​​semiconductor material (especially silicon), the monolithic body 2 having a front surface 2a and a back surface 2b, a front surface 2a and a back surface Both 2b have a flat extension in a horizontal plane xy defined by the first horizontal axis x and the second horizontal axis y, and the front surface 2a and the rear surface 2b are se...

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Abstract

The invention relates to a micro-electromechanical piezo-resistive pressure sensor with self-test capability and a corresponding manufacturing process. The micro-electromechanical pressure sensor includes a monolithic body of a semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezo-resistive type are arranged inthe sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic bodyto cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure. The invention also relates to an electronic device.

Description

Technical field [0001] The present disclosure relates to a MEMS (Micro Electro Mechanical System) pressure sensor with self-test capability, and to a corresponding manufacturing method. Background technique [0002] Semiconductor integrated pressure sensors are known, which are made by typical microfabrication techniques of MEMS. [0003] For example, such sensors are used in portable or wearable electronic devices, or in the automotive field, are used in pneumatic and hydraulic applications; for example, pressure sensors with high full scale (up to 350bar) are used in vehicles The brake system application associated with the brake pedal. [0004] In particular, piezoresistive pressure sensors are known, and their operation is based on piezoresistivity, that is, the ability of some materials to modify their resistivity as the mechanical stresses they experience change. For example, the resistivity decreases when compressive stress is applied, and the resistivity increases when tens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/22B81B7/02B81C1/00H10N30/30H10N30/853
CPCG01L1/22B81B7/02B81C1/00158B81C1/00182B81B2201/0264G01L9/0054G01L27/002G01L27/007H10N30/308H10N30/8554G01L9/0052G01L27/00
Inventor E·杜奇L·巴尔多
Owner STMICROELECTRONICS SRL