Sequential infiltration synthesis apparatus

A technology for synthesizing equipment and equipment, applied in the direction of optomechanical equipment, instruments, coatings, etc., can solve the problems of low etching resistance, difficult transfer, etc., and achieve the effect of increasing throughput

Pending Publication Date: 2019-07-23
ASM IP HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This low etch resistance and high line edge roughness can make the transfer of proper patterning to the underlying layer more difficult

Method used

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  • Sequential infiltration synthesis apparatus
  • Sequential infiltration synthesis apparatus
  • Sequential infiltration synthesis apparatus

Examples

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Embodiment Construction

[0032] While certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention as well as obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific disclosed embodiments described below.

[0033] figure 1 Depicted is a sequential osmosis synthesis apparatus according to an embodiment. The apparatus comprises a reaction chamber 2 made of a suitable material such as steel, aluminum or quartz. A substrate 12 topped with a permeable material can be placed on a substrate holder 10 in the reaction chamber 2 via a substrate opening (not shown) by a substrate handler. The reaction chamber 2 forms a chamber closed at one end by a flange through which gas is introduced via one or more openings provided with at least one (distribution) reaction chamber valve 19 for...

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Abstract

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration ofan infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Description

technical field [0001] The present disclosure generally relates to apparatus and methods for manufacturing electronic devices. More specifically, the present disclosure relates to forming structures on substrates with infiltration equipment. Background technique [0002] With the trend of semiconductor devices becoming smaller and smaller, different patterning techniques have emerged. These techniques include spacer-defined quadruple patterning, extreme ultraviolet lithography (EUV) and EUV combined spacer-defined double patterning. Additionally, directed self-assembly (DSA) has been considered as an option for future lithography applications. DSA involves the use of block copolymers to define patterns for self-assembly. The block copolymers used may include poly(methyl methacrylate) (PMMA), polystyrene or poly(styrene-block-methyl methacrylate) (PS-b-PMMA). Other block copolymers may include the emerging "high chi" polymers, which may enable small dimensions. [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/04C23C16/44C23C16/448C23C16/455C23C16/46C23C16/52H01L21/02
CPCC23C16/045C23C16/4412C23C16/45523C23C16/46C23C16/4485H01L21/0332H01L21/0337C23C16/45527C23C16/52C23C16/45544C23C16/4408H01L21/0228H01L21/0273C23C16/45561G03F7/2004H01L21/02205
Inventor I·J·赖梅克斯J·W·麦斯W·科内鹏K·K·卡谢尔
Owner ASM IP HLDG BV
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