Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system

Abstract

The present invention provides a method for preparing a shallow trench isolation structure, a chemical mechanical polishing method and a system, including the following steps: 1) measuring the previous thickness of the target material layer, according to the previous thickness of the target material layer and the first stage The thickness of the target material layer retained after chemical mechanical polishing determines the first target removal thickness; 2) The theoretical grinding rate is determined according to the actual use time of the grinding consumables; 3) The grinding parameters are dynamically corrected according to the first target removal thickness and the theoretical grinding rate. The grinding parameters perform the first-stage chemical mechanical grinding on the target material layer; 4) perform the second-stage chemical mechanical grinding on the target material layer to achieve the removal of the second target removal thickness. The invention determines the grinding parameters by collecting the target removal thickness of the target material layer and combining the actual use time of the grinding consumables, thereby improving the flattening effect of grinding, eliminating the residue of the target material layer after chemical mechanical grinding, and improving the yield.

Description

technical field

[0001] The invention relates to the technical field of semiconductor technology, in particular to a preparation method of a shallow trench isolation structure, a chemical mechanical polishing method and a system. Background technique

[0002] The process flow of shallow trench isolation is to etch a shallow trench on the surface of the silicon substrate first, then grow silicon dioxide in the shallow trench, and finally remove the excess silicon dioxide on the surface by chemical mechanical polishing, and retain the silicon dioxide in the shallow trench. Silicon dioxide, forming shallow trench isolation. like figure 1 Shown is a schematic cross-sectional structure of a semiconductor structure before chemical mechanical polishing. A silicon nitride layer 12 is grown on the surface of the silicon substrate 11, and a silicon dioxide layer 13 is grown after a shallow trench is etched. Due to the unevenness of the shallow trenches, the silicon dioxide layer 13 ...

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