Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system

A chemical machinery and grinding method technology, applied in grinding machine tools, grinding devices, control of workpiece feed movement, etc., can solve problems such as the surface of silicon dioxide is not flat enough to eliminate residues of target material layers, improve yield, improve The effect of the flattening effect

Active Publication Date: 2021-04-27
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a preparation method of a shallow trench isolation structure, a chemical mechanical polishing method and a system, which are used to solve the problem of performing the first stage of the silicon dioxide layer in the prior art. During chemical mechanical polishing, the surface of silicon dioxide is not flat enough after the first stage of chemical mechanical polishing due to the fact that the grinding time and grinding pressure are kept at a constant value

Method used

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  • Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system
  • Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system
  • Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system

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Embodiment 1

[0097] see Figure 5 , the invention provides a kind of chemical mechanical grinding method, described chemical mechanical grinding method comprises the steps:

[0098] 1) Measuring the previous thickness of the target material layer, and determining the first thickness of the target material layer according to the previous thickness of the target material layer and the thickness of the target material layer retained after the first-stage chemical-mechanical polishing. target removal thickness;

[0099] 2) Determine the theoretical grinding rate of the grinding consumable under the actual use time according to the service life and the actual use time of the grinding consumable;

[0100] 3) Dynamically modify the grinding parameters according to the first target removal thickness and the theoretical grinding rate of the grinding consumables under the actual use time, and perform the first-stage chemical-mechanical grinding on the target material layer according to the grinding...

Embodiment 2

[0137] see Figure 7 ~ Figure 13 , the present invention also provides a method for preparing a shallow trench isolation structure, the method for preparing the shallow trench isolation structure includes the following steps:

[0138] 1) providing a substrate;

[0139] 2) forming a grinding barrier layer on the upper surface of the substrate;

[0140] 3) forming a shallow trench in the substrate, the shallow trench penetrates the barrier layer up and down and extends into the substrate;

[0141] 4) filling the shallow trench with a target material layer, the target material layer filling the shallow trench and covering the upper surface of the polishing stopper layer;

[0142] 5) Using the chemical mechanical polishing method as described in Example 1 to remove the target material layer located on the upper surface of the grinding barrier layer, and the target material layer remaining in the shallow trench constitutes the shallow trench Slot isolation structure.

[0143] I...

Embodiment 3

[0156] see Figure 14, the present invention also provides a chemical mechanical polishing system, which includes: a chemical mechanical polishing device 41 , a first measurement module 411 , a feedforward control module 42 and a processing module 43 .

[0157] The first measurement module 411 is disposed on the chemical mechanical polishing device 41 to measure the previous thickness of the target material layer. This setting can conveniently measure the target material layer of each batch, and feed back the measured value to the chemical mechanical polishing system in real time; the feedforward control module 42 is connected with the first measurement module 411 , used to collect the previous value thickness of the target material layer measured by the first measurement module 411, and feed back the collected data to the processing module 43; the processing module 43 includes at least a first processing unit 433, the The first processing unit 433 is connected to the feedfor...

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Abstract

The present invention provides a method for preparing a shallow trench isolation structure, a chemical mechanical polishing method and a system, including the following steps: 1) measuring the previous thickness of the target material layer, according to the previous thickness of the target material layer and the first stage The thickness of the target material layer retained after chemical mechanical polishing determines the first target removal thickness; 2) The theoretical grinding rate is determined according to the actual use time of the grinding consumables; 3) The grinding parameters are dynamically corrected according to the first target removal thickness and the theoretical grinding rate. The grinding parameters perform the first-stage chemical mechanical grinding on the target material layer; 4) perform the second-stage chemical mechanical grinding on the target material layer to achieve the removal of the second target removal thickness. The invention determines the grinding parameters by collecting the target removal thickness of the target material layer and combining the actual use time of the grinding consumables, thereby improving the flattening effect of grinding, eliminating the residue of the target material layer after chemical mechanical grinding, and improving the yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a preparation method of a shallow trench isolation structure, a chemical mechanical polishing method and a system. Background technique [0002] The process flow of shallow trench isolation is to etch a shallow trench on the surface of the silicon substrate first, then grow silicon dioxide in the shallow trench, and finally remove the excess silicon dioxide on the surface by chemical mechanical polishing, and retain the silicon dioxide in the shallow trench. Silicon dioxide, forming shallow trench isolation. like figure 1 Shown is a schematic cross-sectional structure of a semiconductor structure before chemical mechanical polishing. A silicon nitride layer 12 is grown on the surface of the silicon substrate 11, and a silicon dioxide layer 13 is grown after a shallow trench is etched. Due to the unevenness of the shallow trenches, the silicon dioxide layer 13 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105H01L21/762H01L21/66B24B37/005B24B37/04B24B49/02
CPCB24B37/005B24B37/042B24B49/02H01L21/31051H01L21/76224H01L22/12H01L22/26
Inventor 蔡长益
Owner CHANGXIN MEMORY TECH INC
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