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Multiscale simulation method based on tetravalent compound heterojunction structure

A simulation method and technology of heterojunctions, which are applied in design optimization/simulation, constraint-based CAD, special data processing applications, etc., can solve problems such as lack of research on tetravalent compound heterojunctions, and achieve accurate simulation results.

Inactive Publication Date: 2019-08-02
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

Therefore, at present, the heterostructure of new two-dimensional materials is still in the exploratory stage, and the research on the application of tetravalent compound heterojunctions to new two-dimensional material devices is very scarce, and the simulation method proposed from the atomic level is very important to promote the development of this problem. research is crucial

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  • Multiscale simulation method based on tetravalent compound heterojunction structure
  • Multiscale simulation method based on tetravalent compound heterojunction structure
  • Multiscale simulation method based on tetravalent compound heterojunction structure

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Embodiment Construction

[0019] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0020] According to the multi-scale simulation method based on the tetravalent compound heterostructure of the present invention, the calculation process is as follows figure 1 shown, including the following steps:

[0021] (1) Construct the atomic model of tetravalent compound heterojunction from the atomic level.

[0022] Modeling the material structure of tetravalent compound heterojunctions from the atomic level, you can choose to combine the BURAI visual interface to model the atomic structure, set the relevant parameters of the material in the spatial structure, and expand from the original cell to a two-dimensional supercell. From the structural point of view, both tin sulfide and germanium sulfide belong to the MX type of tetravalent compounds, and are very similar in atomic structure to a series of tetravalent compou...

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Abstract

The invention discloses a multiscale simulation method based on tetravalent compound heterojunction structure. The method comprises the steps of modeling an atomic layer of a tetravalent compound heterojunction material, calculating material characteristics and the like. The method mainly comprises the following steps: carrying out material structure modeling on a tetravalent compound heterojunction from an atomic layer; analyzing the spatial heterostructure of an example material, wherein the effect of VanderWaals force in the heterostructure needs to be considered; analyzing the characteristics of the heterojunction material by using a first principle, so that the characteristics of energy band, state density and the like are obtained. According to the method, the first principle, the density functional theory and the plane wave and pseudo potential theory are combined. The system-level multi-scale method of the local Weibull function is maximized, and the method has important significance for exploring the performance of related materials of novel tetravalent compound heterostructure two-dimensional materials.

Description

technical field [0001] The invention relates to a material simulation method, in particular to a multi-scale simulation method based on a tetravalent compound heterojunction structure. Background technique [0002] Two-dimensional materials have become one of the hot frontier scientific and technological fields. Two-dimensional materials are usually thin films composed of one or several layers of atoms, so they are very thin and have excellent electrical, mechanical, thermal, and optical properties. New two-dimensional materials Since the discovery of graphene in 2004, the search for other new two-dimensional crystal materials has been at the forefront of the field of two-dimensional material research. Just like graphene, other two-dimensional crystals with large size and high quality are not only very important for exploring new physical phenomena and properties under the two-dimensional limit, but also have many novel applications in the fields of electronics and optoelec...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F2111/04G06F30/20
Inventor 江斌渠开放吉娜李桂华王伟
Owner NANJING UNIV OF POSTS & TELECOMM
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