Light-emitting diode chip structure and manufacturing method thereof

Abstract

The invention provides a light-emitting diode chip structure and a manufacturing method thereof. A substrate; the light-emitting epitaxial structure is positioned on the substrate and comprises a first conductive semiconductor layer, a quantum well layer and a second conductive semiconductor layer which are sequentially stacked; the current expansion layer is formed on part of the surface of the epitaxial structure; the insulating layer wraps the side wall of the current expansion layer and is provided with a series of patterned through hole structures; and the metal layer is formed on the surface of the insulating layer, one part of the metal layer is contacted with the transparent conducting layer through a part of the through hole structure, and the other part of the metal layer is contacted with the light-emitting epitaxial structure through a part of the through hole structure.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a light emitting diode chip structure and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid-state light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and lights. The upgrading of display and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes (referred to as LEDs in English) are usually made of semiconductors such as GaN (gallium nitride), GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP ...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light-emitting diode chip structure and its manufacturing method, which are used to solve the problem of low light extraction from the outside of the light-emitting diode chip in the prior art, resulting in reduced luminous efficiency.

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