Light-emitting diode chip structure and manufacturing method thereof

Abstract

The invention provides a light-emitting diode chip structure and a manufacturing method thereof. The structure includes: a substrate; a light-emitting epitaxial structure located on the substrate, including a first conductivity type semiconductor layer, a quantum well layer and a second conductivity type semiconductor layer stacked in sequence. A semiconductor layer; a current spreading layer, formed on part of the surface of the epitaxial structure; an insulating layer, wrapping the sidewall of the current spreading layer, and the insulating layer has a series of patterned through-hole structures; a metal layer, formed on the On the surface of the insulating layer, the part of the metal layer is in contact with the transparent conductive layer through a part of the through-hole structure, and the other part of the metal layer is in contact with the light-emitting epitaxial structure through a part of the through-hole structure.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, and in particular relates to a light emitting diode chip structure and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and light lamps. The upgrading of display and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and it is also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes (LED for short) are usually made of semiconductors such as GaN (gallium nitride), GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP ...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light-emitting diode chip structure and its manufacturing method, which are used to solve the problem of low light extraction from the outside of the light-emitting diode chip in the prior art, resulting in reduced luminous efficiency.

Images