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CVD gas injector for CVD system

A technology of chemical vapor deposition and gas nozzle, applied in the direction of chemical reactive gas, gaseous chemical plating, chemical instruments and methods, etc., can solve the problems of increased manufacturing process time, reduce defective rate, and improve epitaxy uniformity Effect

Active Publication Date: 2019-08-06
HERMES EPITEK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, in addition to the horizontal diffusion for a certain period of time, the various reactive gases also need to diffuse vertically for a certain period of time before each reactive gas can be evenly distributed in the reaction chamber and react, resulting in an increase in the manufacturing process time

Method used

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  • CVD gas injector for CVD system
  • CVD gas injector for CVD system
  • CVD gas injector for CVD system

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Embodiment Construction

[0044] Some embodiments of the invention are described in detail below. However, the invention can be broadly practiced in other embodiments than this detailed description. That is to say, the scope of the present invention is not limited by the proposed embodiments, but is subject to the protection scope of the proposed patent application of the present invention. Secondly, when the various components (such as gas distribution layer, gas channel) in the gas shower head applied to the chemical vapor deposition device shown in the illustration of the embodiment of the present invention are described with a single component, it should not be taken as an effective Recognized as limited, that is, when the following description does not particularly emphasize the limitation on the number, the spirit and scope of application of the present invention can be extended to the structure in which a plurality of components coexist. Furthermore, in this specification, the different parts o...

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Abstract

A gas injector for a chemical vapor deposition (CVD) system is provided with one or more gas distributing layers. Each gas distributing layer comprises a central portion, a plurality of stream guides,and a plurality of gas channels. A gas distributer is placed within the central portion. Each stream guide has a first end, a middle portion, and a second end, where the middle portion is arranged between the first end and the second end, the first end is arranged near the central portion, and the second end is arranged near the peripheral of the gas distributing layer. Each gas channel is formedand interposed between two of the plurality of stream guides and allows transportation of gas. The width of each stream guide is gradually increased from the first end to the middle portion and is gradually decreased from the middle portion to the second end.

Description

technical field [0001] The invention relates to a gas shower head applied to a chemical vapor deposition device, in particular to a gas shower head with high distribution efficiency. Background technique [0002] Metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition, MOCVD), the principle is to use the carrier gas to carry gas phase reactants or precursors into the reaction chamber with the wafer, the carrier under the wafer The susceptor has a heating device to heat the wafer and the gas close to the wafer to increase its temperature, and the high temperature triggers a chemical reaction between a single or several gases, so that the normally gaseous reactants are converted into solids , and deposited on the wafer surface. [0003] The quality of epitaxial layers formed by metal organic chemical vapor deposition is affected by various factors, such as the stability and uniformity of gas flow in the reaction chamber, the uniformity of gas flow acr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45565C23C16/45574C23C16/45591C30B25/14C30B25/165
Inventor 卢柏菁黄冠宁
Owner HERMES EPITEK