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A kind of mram with higher operating frequency

A random access memory and magnetic technology, which is applied in the field of MRAM, can solve the problems that cannot be further improved, and the operating frequency of MRAM is limited, so as to achieve the effects of accelerating bias, increasing read and write speed, and reducing bit line capacitance

Active Publication Date: 2021-03-02
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem that the entire operating frequency of the existing MRAM is limited and cannot be further improved, the present invention provides an MRAM with a higher operating frequency

Method used

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  • A kind of mram with higher operating frequency
  • A kind of mram with higher operating frequency
  • A kind of mram with higher operating frequency

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Embodiment 1

[0029]This embodiment provides a magnetic random access memory MRAM with a higher operating frequency. The MRAM is based on a 2T1MTJ cell structure, on which read bit lines and auxiliary circuits are added to separate read / write bit lines and auxiliary currents. Transfer to quickly bias the read voltage to the selected bit line.

[0030]The present invention first provides a read / write bit line separation structure, such asFigure 4 As shown, this separation of read / write bit lines can effectively reduce the bit line capacitance. The implementation is to design the existing source line (SL) as a write bit line (WBL), and design the original bit line as a read bit Line (RBL), but in many cases, it will cause the area of ​​MRAM to increase, because this division requires a large-sized transistor to transmit the write current (IW).

[0031]Figure 4 It is the 2T1MTJ cell with bit line separation proposed in this application. For various memory array structures, it is superior to the general bi...

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Abstract

The invention discloses an MRAM (Magnetic Random Access Memory) with higher working frequency, and belongs to the technical field of computer storage. The magnetic random access memory is based on a 2T1MTJ unit structure, a read bit line and an auxiliary circuit are added on the basis of the 2T1MTJ unit structure, and are used for separating the read / write bit line, transmitting auxiliary currentand rapidly biasing the read voltage to a selected bit line. According to the invention, the read bit line and the auxiliary circuit are added on the basis of the 2T1MTJ unit structure and are used for separating the read / write bit line and transmitting auxiliary current. The read voltage is quickly biased to the selected bit line; therefore, the response speed is improved, a the half-axis rotating framework is employed to effectively reduced the bit line capacitance, the read-write speed of the MRAM is increased, a current transmitter is further added to an MRAM basic framework based on an array composed of 2T1MTJ units, voltage bias is accelerated, and therefore the response speed is increased, and the working frequency of the whole MRAM is increased.

Description

Technical field[0001]The invention relates to an MRAM with a higher operating frequency, and belongs to the technical field of computer storage.Background technique[0002]Magnetic Random Access Memory MRAM is a non-volatile random access memory, its basic unit such asfigure 1 As shown, it is composed of a MOS tube and a MTJ (Magnetic Tunnel Junctions) device. The traditional MRAM is an array composed of this basic unit and peripheral decoding circuits, control circuits, etc. to realize its storage function. Array likefigure 2 Shown. However, the operating frequency of the 1Mbit MRAM realized by this structure is up to 100MHZ.[0003]With the development of electronic information technology, the operating frequency requirements of MRAM are becoming higher and higher. The existing technology has improved the basic unit of MRAM, changing from the original one transistor and one MTJ unit to two transistors and one MTJ unit. Such asimage 3 The 2T1MTJ cell structure of this bit line general ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675
Inventor 姜岩峰刘鑫于平平梁海莲张曙斌
Owner JIANGNAN UNIV