Supercharge Your Innovation With Domain-Expert AI Agents!

Data operation method of three-dimensional memory and control circuit

A data operation and memory technology, applied in the field of memory, can solve problems such as threshold voltage drift and affect performance, and achieve the effect of improving performance and avoiding threshold voltage drift

Active Publication Date: 2019-08-09
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing 3D NAND has the problem of threshold voltage drift, which affects its performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data operation method of three-dimensional memory and control circuit
  • Data operation method of three-dimensional memory and control circuit
  • Data operation method of three-dimensional memory and control circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0052]For 3D NAND, the more layers there are stacked data storage layers, the greater the storage density. However, since the depth of the channel hole is limited by the precision and limit of the existing etching...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a 3D NAND data operation method and a control circuit. The method comprises the steps of during the process of executing the data erasing operation, when the data storage layeris subjected to data erasure, synchronously performing data erasure on an intermediate redundant layer, and after data erasure operation on the data storage layer and the intermediate redundant layeris completed, programming the intermediate redundant layer to enable the intermediate redundant layer to reach a preset target programming threshold voltage, so that according to the technical schemeof the invention, when the data erasing operation is executed, firstsly the intermediate redundant layer and the data storage layer are erased synchronously; and then the intermediate transition redundancy layer is directly programmed, so that a threshold voltage of the intermediate transition redundancy layer is stabilized at a target programming threshold voltage, the threshold voltage drift problem of the intermediate redundancy layer is avoided, meanwhile, the erasing efficiency of an edge data storage layer adjacent to the intermediate redundancy layer is improved, and the performance ofthe 3D NAND is improved.

Description

technical field [0001] The present invention relates to the technical field of memory, more particularly, to a data operation method and a control circuit of a three-dimensional memory (3D NAND). Background technique [0002] With the continuous development of science and technology, more and more electronic devices are applied to people's daily life and work, bringing great convenience to people's daily life and work, and becoming an indispensable tool for people today. Memory is an important component of many electronic devices. As the functions of electronic devices become more and more powerful, more and more data is required in the memory, and the memory capacity of the memory is required to be larger and larger. [0003] For a conventional two-dimensional planar memory, since its integration density mainly depends on the unit area occupied by a single memory cell, the integration degree is very dependent on the quality of the photolithography and masking process. Howe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C16/14
CPCG11C16/14
Inventor 王明李达
Owner YANGTZE MEMORY TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com