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Stacked image sensor and formation method thereof

An image sensor, stacked technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of large chip area, increased design complexity, chip layout and wiring obstacles, etc., to increase the area and improve the resolution Effect

Inactive Publication Date: 2019-08-09
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although TSV has many advantages, in terms of the current process size, it occupies a large chip area. Too much introduction of TSV will reduce the chip area utilization rate, and the TSV in the chip will cause obstacles to chip layout and wiring, increasing design complexity

Method used

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  • Stacked image sensor and formation method thereof
  • Stacked image sensor and formation method thereof
  • Stacked image sensor and formation method thereof

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Embodiment Construction

[0027] The following description provides specific application scenarios and requirements of the application, with the purpose of enabling those skilled in the art to manufacture and use the contents of the application. Various local modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and embodiments without departing from the spirit and scope of the disclosure. application. Thus, the present disclosure is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.

[0028] The technical solution of the present application will be described in detail below in combination with the embodiments and the accompanying drawings.

[0029] An embodiment of the present application provides a method for forming a stacked image sensor, including: providing a first wafer, the first wafer including an image sensor; providing...

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Abstract

The invention provides a stacked image sensor and a forming method thereof. The formation method comprises the steps of: providing a first wafer, wherein the first wafer comprises an image sensor; providing a second wafer, wherein the first surface of the second wafer is bonded with the second surface of the first wafer, and the second wafer comprise an image signal processing circuit and a secondmetal interconnection structure; and forming a metal wiring layer at the second surface of the second wafer, wherein the metal wiring layer is electrically connected with the second metal interconnection structure through a through hole connection structure in the second wafer. According to the technical scheme of the invention, the area of the pixel area of the image sensor is increased, and theresolution is improved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular, to a stacked image sensor and a method for forming the same. Background technique [0002] An image sensor is a device that converts an optical image into an electrical signal. With the development of the computer and communication industries, the demand for high-performance image sensors is increasing. These high-performance image sensors are widely used in digital cameras, video recorders, personal communication systems (PCS), game consoles, security cameras, and medical miniature cameras. various fields. [0003] With the continuous advancement and development of CMOS technology, the number of transistors is increasing, resulting in smaller and smaller interconnection dimensions. The use of 3D integrated chip stacking technology will help greatly reduce wiring length, shorten signal delay, and reduce power consumption. Power consumption, while reducing the ...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14632H01L27/14636H01L27/14643H01L27/14687H01L27/14689
Inventor 高俊九李志伟黄仁德
Owner HUAIAN IMAGING DEVICE MFGR CORP