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CoCrPtBRe-Containing Sputtering Target, CoCrPtBRe-Containing Membrane, and Method of Preparing the Same

A sputtering target, cobalt-chromium technology, applied in the field of cobalt-chromium-platinum-boron-rhenium sputtering targets, can solve the problems of poor thermal conductivity, increase the probability of sputtering flameout, etc., achieve low linear thermal expansion coefficient, increase sputtering The effect of stability

Active Publication Date: 2019-08-13
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the cobalt-platinum alloy target is doped with boron and chromium, it is easy to make the cobalt-platinum-chromium-boron-containing sputtering target form a microstructure of more than three phases, resulting in the cobalt-platinum-chromium-boron-containing sputtering target The heat conduction effect between the phase and the phase interface in the microstructure becomes worse
Therefore, during the sputtering process, each phase region is prone to thermal expansion and deformation due to heat storage, which greatly increases the probability of flameout during the sputtering process

Method used

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  • CoCrPtBRe-Containing Sputtering Target, CoCrPtBRe-Containing Membrane, and Method of Preparing the Same
  • CoCrPtBRe-Containing Sputtering Target, CoCrPtBRe-Containing Membrane, and Method of Preparing the Same
  • CoCrPtBRe-Containing Sputtering Target, CoCrPtBRe-Containing Membrane, and Method of Preparing the Same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 17

[0034] Examples 1 to 17: Preparation of cobalt-chromium-containing platinum-boron-rhenium sputtering target

[0035] Examples 1 to 17 prepared sputtering targets containing cobalt, chromium, platinum, boron, and rhenium in a similar manner, and the differences among the examples lie in the raw material components, sintering methods and sintering parameters.

[0036] First, raw materials such as cobalt, chromium, platinum, boron, and rhenium were weighed according to the composition ratio shown in Table 1, and then the raw material powder was made through pre-alloy melting and atomization steps. Specifically, the raw material powder is a single pre-alloyed powder containing cobalt, chromium, platinum, boron and rhenium.

[0037] Next, the raw material powder is sintered by means of hot pressing forming method, hot isostatic pressing forming method, plasma sintering forming method or a combination thereof, so as to prepare each cobalt-chromium-containing platinum-boron-rhenium s...

Embodiment 18 to 20

[0047] Examples 18 to 20: Preparation of cobalt-chromium-containing platinum-boron-rhenium sputtering targets

[0048] Examples 18 to 20 prepare cobalt-chromium-containing platinum-boron-rhenium sputtering targets in a manner similar to that of Examples 1 to 3, 6 to 10, 13, 15 and 16, the difference being that in the raw material powders of Examples 18 to 20 It also includes an added element, the added element is hafnium, palladium, yttrium, neodymium, terbium, tantalum or a combination thereof, based on the total number of atoms of the raw material powder, the content of the added element is greater than 0 at% and less than or equal to 5 at%. The components, sintering methods and sintering parameters of the raw material powders used in Examples 18 to 20 are listed in Table 2.

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Abstract

The invention relates to a cobalt-chromium-platinum-boron-rhenium sputtering target material, a cobalt-chromium-platinum-boron-rhenium layer and a preparation method of the cobalt-chromium-platinum-boron-rhenium layer. The invention discloses a cobalt-chromium-platinum-boron-rhenium-containing sputtering target material. The total number of atoms is taken as a reference; the content of cobalt is greater than 50 atomic percent; the content of chromium is greater than or equal to 2 atomic percent and less than or equal to 18 atomic percent; wherein the content of platinum is greater than or equal to 9 atomic percent and less than or equal to 30 atomic percent, the content of boron is greater than or equal to 2 atomic percent and less than or equal to 14 atomic percent, and the content of rhenium is greater than or equal to 2 atomic percent and less than or equal to 8 atomic percent. By controlling the composition of the sputtering target material containing cobalt, chromium, platinum, boron and rhenium, the probability of flameout can be greatly reduced, and the stability during sputtering is improved.

Description

technical field [0001] The invention relates to a cobalt-chromium-containing platinum-boron-rhenium sputtering target material, a cobalt-chromium-containing platinum-boron-rhenium layer and a method for preparing the cobalt-chromium-containing platinum-boron-rhenium sputtering target material. Background technique [0002] The layered structure of a general perpendicular magnetic recording medium includes a substrate, an adhesion layer, a soft underlayer, a seed layer, an intermediate layer, a magnetic recording layer, and a covering layer from bottom to top. layer (capping layer) and lubricating layer. [0003] Among them, the cover layer is arranged on the magnetic recording layer to protect the recording layer. The current cover layer is mainly composed of cobalt-platinum alloy, and elements such as boron and chromium are usually added to try to use the boride phase and chromium element The way of segregation adjusts the performance of its magnetic properties. [0004] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C19/07
CPCC22C19/07C23C14/3407C23C14/3414
Inventor 叶欲安王彦淳黄威智郑惠文
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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