Novel package-free diode and processing technique thereof

Abstract

The invention provides a novel package-free diode and a processing technique thereof. The diode comprises an insulating hard heat dissipation substrate, a first insulating thermal conductive adhesive,a diode chip and a second insulating thermal conductive adhesive. A lower surface of the insulating hard heat dissipation substrate is adhered and fixed to an upper surface of the diode chip throughthe first insulating thermal conductive adhesive. The diode chip comprises a silicon substrate, a lower surface of the silicon substrate is doped with a first impurity to form an N+ region and is doped with a second impurity to form a P+ region, and the N+ region is spaced apart from the P+ region. The surface of the N+ region and the P+ region are provided with metal electrodes, the second insulating thermal conductive adhesive is applied to the lower surface of the diode chip, and each metal electrode is exposed. The material cost and the labor cost can be reduced by greatly simplifying thepackage, the processing cost can be reduced by up to 30%, and the production efficiency per unit time can be improved.

Description

technical field [0001] The invention relates to the field of processing and manufacturing of diodes, in particular to a novel package-free diode and its processing technology. Background technique [0002] Diodes are widely used in various circuits. It can be said that there are diodes wherever there is a circuit. It uses its unidirectional conduction characteristics to convert alternating current into direct current, so that the terminal parts of the circuit can obtain stable direct current input. The current manufacturing method of rectifier diodes is based on the N-type <111> crystalline silicon wafer as the basic material, performing a boron doping on the upper surface of the silicon wafer to form a flat P region, and then performing a phosphorus diffusion on the lower surface to form a flat P region. The flat N region is then processed by photolithography, metallization, alloying and other processes, and finally the PN structure and electrode metal of the diode ar...

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Problems solved by technology

[0004] 1. Since the PN junction is formed by the process of diffusion on both sides of the chip, it is not conducive to the miniaturization of the product;

[0005] 2. There are electrodes and lead frames on both sides of the chip, which further increases the thickness and the complexity of the circuit connection process, and in the subsequent packaging process, the chip cannot be in direct contact with the outer heat sink, and the heat dissipation effect will also be affected;

[0006] 3. There are too many processes in the packaging process, resulting in waste of resources, increased costs, and long production cycles, and too many processes also increase the probability of processing errors

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