Nitride semiconductor light emitting element

Abstract

The invention relates to a nitride semiconductor light emitting element comprising an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer which is arranged between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The active layer comprises at least one quantum well structure formed by a delta-doped layer, a quantum well layer and a quantum barrier layer which are sequentially laminated. The element is favorable for suppressing penetration dislocation in the light emitting layer and improving the light emitting efficiency.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a nitride semiconductor light-emitting element with a multiple quantum well structure. Background technique [0002] Such as figure 1 As shown, the semiconductor light emitting diode generally consists of n-type and p-type doped semiconductor layers (1, 3), and an active layer (2) between them. If driving current is applied to the n-type semiconductor layer (1) and p-type semiconductor layer (3), electrons and holes are injected into the active layer from the n-type semiconductor layer (1) and p-type semiconductor layer (3) respectively (2), the injected electrons and holes recombine in the active layer (2) to emit light. In order to improve the luminous efficiency, a multiple quantum well structure is adopted in the active layer (2). The multiple quantum well structure is a structure in which well layers (21) and potential barrier layers (23) are alternately stacked. [...

AI Technical Summary

Problems solved by technology

In the position close to the threading dislocation, carrier localization occurs, which is one of the reasons for the reduction of luminous efficiency

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