A kind of quantum dot and its manufacturing method, qled and display panel
A production method, quantum dot technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, semiconductor/solid-state device manufacturing, etc., can solve the problem of weakening the luminous ability of quantum dots, and achieve the reduction of radiation transitions, The effect of enhancing the luminous ability
Active Publication Date: 2021-09-03
BOE TECH GRP CO LTD +1
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Problems solved by technology
However, CdSe / CdS contains toxic heavy metal cadmium. At present, cadmium-free system is the development trend of QD.
The Auger recombination phenomenon exists between the interface of the quantum dot core and the interface of the quantum dot shell of the current cadmium-free QD, which causes more non-radiative transitions and weakens the luminescence ability of the quantum dots.
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[0040] In order to make the purpose, technical solutions and advantages of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application.
[0041] The interface between the quantum dot core and the quantum dot shell of the current cadmium-free QD will cause more non-radiative transitions, which weakens the luminescence ability of the quantum dot.
[0042] In view of this, the embodiment of the present application provides a new quantum dot, and a charge transition layer for transitioning the charge valence state between the quantum dot core and the quantum dot shell is set between the quantum dot core and the quantum dot shell, so as to reduce the quantum dot The non-radiative transition between the interface of the core and the interface of the quantum dot shell, thereby enhancing the luminescence ability of th...
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Abstract
The application discloses a quantum dot and its manufacturing method, QLED and a display panel, which are used to reduce the non-radiative transition between the interface of the quantum dot core and the interface of the quantum dot shell, and enhance the luminous ability of the quantum dot. The quantum dots therein include a quantum dot core, a charge transition layer coated outside the quantum dot core, and a quantum dot shell coated outside the charge transition layer, wherein the host material of the charge transition layer is internally doped Metal ions are mixed, and the metal ions are metal ions with variable charge valence, and the charge valence of the metal ions includes the charge valence of the cations in the quantum dot core and the charge valence of the cations in the quantum dot shell.
Description
technical field [0001] The present application relates to the technical field of light-emitting devices, in particular to a quantum dot and a manufacturing method thereof, QLED and a display panel. Background technique [0002] As a new type of luminescent material, quantum dots (Quantum Dot, referred to as QD) have the advantages of narrow luminous spectrum, adjustable luminous wavelength, and high spectral purity. Quantum Dot Light Emitting Diodes (QLEDs) ) has become the main direction of research on new display devices. [0003] The current quantum dots are cadmium-based CdSe / CdS, that is, the quantum dot core and quantum dot shell are made of CdSe / CdS. However, CdSe / CdS contains toxic heavy metal cadmium, and the cadmium-free system is the development trend of QD at present. The Auger recombination phenomenon exists between the interface of the quantum dot core and the interface of the quantum dot shell of the current cadmium-free QD, which causes more non-radiative t...
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IPC IPC(8): H01L51/50C09K11/02C09K11/70C09K11/88B82Y40/00B82Y30/00
CPCB82Y40/00B82Y30/00C09K11/02C09K11/70C09K11/883H10K50/115C09K11/565H10K2102/00B82Y20/00
Inventor 禹钢张爱迪
Owner BOE TECH GRP CO LTD