3D NAND storage device and formation method thereof

A 3D NAND and memory technology, which is applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problem that the characteristic size of the gate spacer is easy to fluctuate and affect the performance of the memory, so as to prevent deformation or tilt, ensure stability, and improve performance effect

Active Publication Date: 2019-09-06
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Existing memories generally include several memory blocks (Blocks), and the memory blocks are generally separated by Gate Line Slits (GLS) vertically penetrating the s

Method used

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  • 3D NAND storage device and formation method thereof
  • 3D NAND storage device and formation method thereof
  • 3D NAND storage device and formation method thereof

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Embodiment Construction

[0037] As mentioned in the background art, in the manufacturing process of the existing 3D NAND memory, the feature size of the gate spacers tends to fluctuate, which affects the performance of the memory.

[0038] It has been found through research that the side walls of the existing gate compartments are prone to inclination, so that the measured characteristic dimensions of the gate compartments tend to fluctuate.

[0039]Further studies have found that due to the large aspect ratio of the formed gate spacer, and after the formation of the gate spacer, the sacrificial layer in the stack structure will be removed, so that the strength of the stack structure is insufficient, which in turn makes the gate spacer The side walls of the groove are easily deformed or inclined. Moreover, since many manufacturing processes in the manufacturing process of 3D NAND memory are carried out at high temperature, the high temperature environment will cause deformation of the isolation layer,...

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Abstract

The invention relates to a 3D NAND storage device and a formation method thereof. According to the formation method of the 3D NAND storage device, a bridge material layer having a gate isolation groove etching window is formed, a sacrifice layer is removed during the gate isolation groove formation process and after formation of the gate isolation groove, a control gate and an array common sourcepole are formed, a plurality of bridge structures bridge the gate isolation groove, side walls of two sides of the gate isolation groove can be supported by the bridge structures, the side walls of the two sides of the gate isolation groove are prevented from being deformed or from inclining, so that the stability of a characteristic size of the formed gate isolation groove is ensured, and the performance of the 3D NAND is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for reducing 3D NAND memory. Background technique [0002] NAND flash memory is a non-volatile storage product with low power consumption, light weight and good performance, and has been widely used in electronic products. At present, the NAND flash memory with a planar structure is close to the limit of practical expansion. In order to further increase the storage capacity and reduce the storage cost per bit, a 3D NAND memory with a 3D structure is proposed. [0003] The formation process of the existing 3D NAND memory generally includes: forming a stacked structure in which isolation layers and sacrificial layers are alternately stacked on the substrate; etching the stacked structure to form channel holes in the stacked structure. After forming the channel holes, The substrate at the bottom of the channel hole is etched to form a groove in the substrate; in ...

Claims

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Application Information

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IPC IPC(8): H01L27/1157H01L27/11578
CPCH10B43/35H10B43/20H10B43/10H10B43/27H10B43/50
Inventor 霍宗亮欧文杨号号徐伟严萍黄攀周文斌
Owner YANGTZE MEMORY TECH CO LTD
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