Preparation method of cavity type bulk acoustic wave resonator and cavity type bulk acoustic wave resonator
A bulk acoustic wave resonator and cavity technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of metal bonding layer bubbles, thin film lift, depression, etc., to improve stress unevenness, improve bonding efficiency, improve Effects of Roughness Problems
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[0045] The invention provides a method for preparing a cavity-type bulk acoustic resonator, comprising the following steps:
[0046] S1) performing damage treatment on the single crystal wafer through a single crystal wafer damage treatment process to obtain a single crystal wafer with a damaged layer 7;
[0047] S2) Prepare a lower electrode and a sacrificial layer 9 sequentially on the lower surface of the single crystal wafer with the damaged layer 7, and prepare a polymer bonding layer 3 having a thickness greater than or equal to the sum of the thicknesses of the sacrificial layer 9 and the lower electrode 2 on the surface of the sacrificial layer 9, After the substrate 4 and the polymer bonding layer 3 are subjected to a bonding process and a single crystal wafer splitting process, a single crystal thin film with a lower electrode is obtained;
[0048] S3) Prepare an upper electrode on the upper surface of the single crystal thin film with a lower electrode, open a sacri...
Embodiment 1
[0063] Sample 1: 1) Implant high-energy helium ions (He+) on the lower surface of the lithium niobate single crystal wafer, so that a damaged layer is formed inside the lithium niobate single crystal wafer, and the damaged layer separates the lithium niobate single crystal wafer Form the lithium niobate upper piezoelectric layer and lithium niobate single crystal thin film layer; the implantation energy of He+ is 200 keV, and the implantation depth is 0.6 μm; 2) Magnetron sputtering is used to grow the lower electrode on the lower surface of the lithium niobate single crystal thin film layer , the lower electrode is mask-etched to obtain a patterned lower electrode, the material of the lower electrode is Al, and the thickness of the lower electrode is 0.01 μm; a sacrificial layer (PI) is grown on the surface of the patterned lower electrode; Mold etching, prepare a patterned sacrificial layer, the thickness of the sacrificial layer is 0.3μm; prepare a polymer bonding layer on t...
Embodiment 2
[0067] Sample 2: The preparation process is the same as sample 1 in Example 1, the difference is that the thickness of the sacrificial layer is 0.6 μm, the material of the spin-coated polymer bonding layer is HSQ, the thickness is 0.8 μm, and the Q value of the resonator is 2510, which is equivalent to The electromechanical coupling coefficient is 19.5%.
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