Flexible SOI device structure and preparation method thereof

Abstract

The invention provides a flexible SOI device structure and a preparation method thereof; the flexible SOI device structure sequentially comprises a flexible substrate, a first back gate region, a second back gate region and an inter-back-gate isolation part, an insulating buried layer, a first active region, a second active region and a device isolation part, an interlayer dielectric layer and a contact hole from the bottom up, wherein the first back gate region, the second back gate region and the inter-back-gate isolation part are located above the insulating buried layer; each of the firstactive region and the second active region comprises a gate region, a body region located below the gate region, and a source and a drain which are located at the two transverse ends of the body region respectively; the interlayer dielectric layer is located at the highest position; the contact hole runs through the interlayer dielectric layer, the device isolation part and the insulating buried layer in sequence; and the contact hole is filled with a conductive material to form a contact part, and the first back gate region and the second back gate region are applied with a bias voltage by the contact part, wherein the first back gate region and the second back gate region are electrically isolated from each other by the inter-back-gate isolation part. According to the structure, the inter-back-gate isolation part is added to realize independent modulation of the back gate device; and meanwhile, the flexible preparation of the flexible SOI device structure is realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and more specifically relates to a flexible SOI device structure and a preparation method thereof. Background technique [0002] Flexible electronic technology has become a research hotspot in the electronics industry and academia because of its outstanding scalability, portability and adaptability. In particular, the combination of silicon-based rigid materials and soft substrates makes electronic devices flexible and extensible while maintaining the original high performance and high reliability, which has engineering application value. Since silicon-on-insulator (SOI, Silicon-on-Insulator) technology introduces an insulating buried layer (BOX, BuriedOxide) between the single crystal silicon device layer and the silicon substrate, complete dielectric isolation is achieved, with latch-up immunity, speed High, low power consumption, high integration, high temperature resistan...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a flexible SOI device structure and its preparation method, so as to solve the problems of complex preparation process and poor back gate isolation in the prior art

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