High-power vertical cavity surface emitting laser with integrated light emitting area

A vertical cavity surface emission and laser technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problem of uneven distribution of laser current density, achieve the effect of increasing power, reducing quantity, and improving conversion efficiency

Active Publication Date: 2019-09-13
VERTILITE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a high-power vertical cavity surface emitting laser with an integrated light emitting area, which is used to solve the problems of uneven current density distribution of large aperture vertical cavity surface emitting lasers.

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  • High-power vertical cavity surface emitting laser with integrated light emitting area
  • High-power vertical cavity surface emitting laser with integrated light emitting area
  • High-power vertical cavity surface emitting laser with integrated light emitting area

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Embodiment 1

[0040] This embodiment provides a high-power vertical-cavity surface-emitting laser with an integrated light-emitting area. After research and analysis, the existing vertical-cavity surface-emitting laser with a ring-shaped upper electrode structure 113, when the current is injected, the current will mainly concentrate on the emission hole 10 The edge region of the emission hole 10 has a small current or even no current in the middle region of the emission hole 10. The current distribution in the edge region of the emission hole 10 is relatively crowded, while there is almost no current distribution in the middle region, which will cause the overall conversion efficiency of the vertical cavity surface emitting laser to be low. Low, the light intensity distribution in the emission hole 10 is not uniform. The design principle of the present invention is: the elongated emission regions 100 in the emission hole 10 are connected as a whole, and the distance (such as the lateral dist...

Embodiment 2

[0066] Such as Figure 3~Figure 4 As shown, among them, Figure 4 shown as image 3 The schematic diagram of the cross-sectional structure at BB' in the middle, this embodiment provides a high-power vertical cavity surface emitting laser with an integrated light emitting area, its basic structure is as in embodiment 1, wherein the vertical cavity surface emitting laser is a back emitting structure, The vertical cavity surface emitting laser includes: a P-type conductive lower reflector 211, the back of the P-type conductive lower reflector 211 has a lower electrode structure 107; an active layer 109 is located on the P-type conductive lower reflector 211 On; the N-type conductive upper reflector 208, located above the active layer 109, the N-type conductive upper reflector 208 has a current confinement layer 110, and the emission hole 10 is defined by the current confinement layer 110 The substrate 106 is located on the N-type conductive upper mirror 208; the dielectric laye...

Embodiment 3

[0068] Such as Figure 5~Figure 6 As shown, among them, Figure 6 shown as Figure 5 The schematic diagram of the cross-sectional structure at CC' in the middle, this embodiment provides a high-power vertical cavity surface emitting laser with an integrated light emitting area, its basic structure is as in embodiment 1, wherein the vertical cavity surface emitting laser is a back emitting structure, The vertical cavity surface emitting laser includes: a P-type conductive lower reflector 211, the back of the P-type conductive lower reflector 211 has a lower electrode structure 107; an active layer 109 is located on the P-type conductive lower reflector 211 On; the N-type conductive upper reflector 208, located above the active layer 109, the N-type conductive upper reflector 208 has a current confinement layer 110, and the emission hole 10 is defined by the current confinement layer 110 The substrate 106 is located on the N-type conductive upper reflector 208, and the substra...

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Abstract

The invention provides a high-power vertical cavity surface emitting laser with an integrated light emitting area. The high-power vertical cavity surface emitting laser comprises an emitting hole anda conductive layer, wherein an isolation groove is formed in the emitting hole, the emitting hole is partially isolated to form a long and narrow emission area which is communicated, and an insulatinglayer is arranged in an isolation layer; the conductive layer is filled in the isolation groove, extends towards the two sides and forms an ohmic contact with the long and narrow emission area. According to the emitting laser, the emitting hole of the vertical cavity surface emitting laser with the large oxidation aperture is isolated into the long and narrow emission area, and the long and narrow emission area is in contact with the conductive layer, so that the current path in the emitting hole is prolonged, and the current density of the middle area of the vertical cavity surface emittinglaser with the large oxidation aperture can be effectively increased; in addition, the current can be transversely transmitted from the conductive layer, so that the uniformity of the current densitydistribution in the light-emitting hole is greatly improved, and the conversion efficiency is improved. Meanwhile, the coherence of emergent light is kept in a large range. The laser can be applied tothe fields of laser radars, infrared cameras, depth recognition detectors and the like.

Description

technical field [0001] The invention belongs to the field of design and manufacture of semiconductor lasers, in particular to a high-power vertical cavity surface-emitting laser with an integrated light-emitting area. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is developed on the basis of gallium arsenide semiconductor materials. It is different from other light sources such as light-emitting diodes (LEDs) and laser diodes (LDs). It has small size, circular output spot, and single longitudinal mode output. , small threshold current, low price, easy integration into large-area arrays, etc., are widely used in optical communication, optical interconnection, optical storage and other fields. [0003] The Vertical Cavity Surface Emitting Laser (VCSEL) is a new type of laser that emits light from the vertical surface. Its different structure from the traditional edge emitting laser brings many advantages: small divergence angle and circular symme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
CPCH01S5/18308H01S5/18319
Inventor 梁栋霍轶杰刘嵩
Owner VERTILITE CO LTD
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