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Method for producing sputtered silicon oxide electrolyte

An electrolyte and silicon oxide technology, used in sputtering, circuits, electrical components, etc., can solve problems such as high leakage, bias current, and instability

Inactive Publication Date: 2019-09-13
UNIV OF MANCHESTER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, one or both of these techniques can result in high leakage and bias current instability

Method used

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  • Method for producing sputtered silicon oxide electrolyte
  • Method for producing sputtered silicon oxide electrolyte

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Embodiment Construction

[0021] According to one embodiment of the present invention, a method 100 for sputtering a silicon oxide electrolyte 290 is provided. available via figure 1 The method 100 is performed with the apparatus shown in FIG. In use, the silicon-based target 210 and the sample 220 are disposed in the sputtering chamber 200 . In one embodiment of the present invention, the device 200 may further include a power supply 240 and a cooling system 260 . In one embodiment of the present invention, the silicon-based target 210 may comprise silicon or silicon dioxide. Applications of silicon oxide electrolytes include use in biological / chemical sensors, and gate dielectrics in thin film oxide transistors, among other devices due to their high capacitance. Other applications are contemplated.

[0022] In some embodiments, the sputtering chamber 200 can be part of a sputtering system, such as the MiniLab S025M floor-standing manual RF sputtering system, although it is understood that other s...

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Abstract

Embodiments of the present invention provide a sputtered silicon oxide electrolyte and a method for producing the same, wherein one or more of the predetermined pressure of the working gas and the power density per target unit area are controlled such that the sputtered silicon oxide electrolyte has an amorphous structure, a density of between 0.5 to 2.0 g / cm3 and a unit area capacitance of between 0.05 to 15.0 [mu]F / cm2 at 10-200Hz.

Description

technical field [0001] The present invention generally relates to methods for producing sputtered (sputtered) silicon oxide (silicon oxide, silicon dioxide) electrolytes and silicon oxide electrolytes produced thereby. Background technique [0002] Thin film oxide semiconductors offer many advantages over their silicon counterparts and are suitable for many different industries and device applications, such as the wearable electronics industry and display drivers, to name a few. However, the nature of thin film oxide semiconductors means that their use in transistors especially requires higher dielectric capacitance materials for fabrication in order to minimize the operating voltage of the transistors themselves. Applications such as sensors, battery-based portable electronics, and other low power electronics desire low operating voltages. Higher dielectric capacitance in transistors is achieved by thinning the dielectric layer thickness and using materials with extremely ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/10C23C14/00C23C14/54H01L29/00
CPCC23C14/0036C23C14/10C23C14/541C23C14/0057C23C14/3414
Inventor 宋爱民马嚣尘
Owner UNIV OF MANCHESTER