Etching method of semiconductor wafer structure

Abstract

The invention provides an etching method of a semiconductor wafer structure. The etching method comprises the steps of: etching a semiconductor wafer structure to be etched, wherein the flow of etching gas introduced into an edge area is greater than that of etching gas introduced into a central area, and the radio frequency bias power applied to the semiconductor wafer structure to be etched is greater than the standard radio frequency bias power, so that the etching rate of the edge area is enhanced, the etching uniformity of the semiconductor wafer structure to be etched is improved, the electric leakage caused by the connection of two adjacent etching grooves is avoided, the resistance value is effectively reduced, and the quality of the subsequently prepared semiconductor wafer structure is improved.

Description

technical field [0001] The invention relates to the technical field of wafer manufacturing of semiconductor devices, in particular to an etching method for a semiconductor wafer structure. Background technique [0002] Etching is a technology that removes materials using chemical reactions or physical impacts. In fact, in a narrow sense, it is photolithographic etching. Etching treatment to remove the part that needs to be removed. Generally, etching technology can be divided into wet etching and dry etching. It is a very important process in semiconductor manufacturing process, microelectronics manufacturing process and micro-nano manufacturing process. The step is the main process of patterning (pattern) processing associated with photolithography. [0003] Plasma etching is the most common form of dry etching. Its principle is: the gas exposed to the electronic region forms a plasma. When the plasma is accelerated by an electric field, it will release enough energy to p...

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Problems solved by technology

[0010] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for etching a semiconductor wafer structure, which is used to solve the problem in the prior art that the height of the edge ring is not equal to the height of the wafer to be etched. The uneven distribution of etching gas on the surface of the wafer to be etched makes the aperture of the etching groove in the edge area smaller, the etching groove in the edge area is offset, and the adjacent two etching grooves are connected together, resulting in leakage ; and because the angle between the extension direction of the etching groove in the edge area and the vertical direction is too large, or the direction of the plasma is too crooked, the etching stops, which affects the etching uniformity of the wafer to be etched question

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