stt-mram memory and preparation method thereof

Abstract

The invention provides an STT-MRAM memory and a preparation method thereof. The STT-MRAM memory includes: a word line, including a stacked conductive layer and a magnetic shielding layer, the magnetization direction of the magnetic shielding layer is the extension direction of the word line; a plurality of MTJ units, each MTJ unit includes a sequentially stacked fixed layer , the first isolation layer, the free layer, the second isolation layer and the polarization layer, each polarization layer is arranged in contact with the magnetic shielding layer, and the magnetization direction of the polarization layer is perpendicular to the magnetization direction of the free layer. Since the magnetic shielding layer in the word line can be arranged in contact with each polarized layer, it can have a larger size than the polarized layer, so that the stray field of the polarized layer is constrained, and the polarized layer and the magnetic shielding layer have a The same magnetization direction significantly reduces the magnetic field generated by the polarized layer at the free layer, thereby effectively avoiding the adverse effects of the polarized layer magnetic field while introducing the polarized layer spin transfer torque to reduce the write current.

Description

technical field [0001] The invention relates to an STT-MRAM memory, in particular to an STT-MRAM memory and a preparation method thereof. Background technique [0002] The memory that uses current to change the state of MTJ is magnetic random access memory (STT-MRAM), which is a new type of memory with great potential. In addition to the advantages of simple circuit design, fast read and write speed, and unlimited erasing and writing, the memory has the biggest advantage over traditional memories such as DRAM in that it is non-volatile (data will not be lost when power is turned off). The magnetic direction of the free layer (magnetic recording layer) can be manipulated by an external field (H) or a write current (I). When the magnetization direction of the free layer is parallel or antiparallel to the fixed layer, it can correspond to data 0 or 1 respectively. Traditional MRAM uses a magnetic field to write information, and the generation of the magnetic field depends on ...

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a kind of STT-MRAM memory and preparation method thereof, to solve the problem that the polarized layer in the MTJ structure generates a magnetic field in the space around the MTJ structure in the prior art, which causes magnetic interference to the adjacent free layer

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