Radio-frequency rotary joint and ion etching system therewith

Abstract

The invention discloses a radio-frequency rotary joint and an ion etching system therewith. The radio-frequency rotary joint comprises a radio-frequency rotor used for accessing a bias electrode and a radio-frequency stator used for accessing a radio-frequency current, and a rotating hole is formed in the radio-frequency stator; the radio-frequency rotor is rotatably arranged in the rotating hole; and a conductive jacket formed by spherical metal particles is embedded between the inner wall of the rotating hole and the outer wall of the radio-frequency rotor. According to the invention, through the conductive jacket which is formed by the spherical metal particles and arranged between the radio-frequency stator and the radio-frequency rotor, effective connection of the radio-frequency current between the rotary joint and the bias electrode is ensured, the smooth rotation of the radio-frequency rotor in the radio-frequency stator can also be ensured, the rotating requirement of the substrate after being connected with the rotary joint is met, and the speed and uniformity of coating and etching of the ion etching system are improved. The ion etching system is connected with a rotating platform, the substrate and the radio-frequency rotor through a dynamic sealing device, and meanwhile, the vacuum sealing requirement of the cavity etching is met.

Description

technical field [0001] The invention belongs to the technical field of semiconductor etching, and in particular relates to a radio frequency rotary joint and an ion etching system provided with the radio frequency rotary joint. Background technique [0002] In semiconductor equipment, electrical and fluid connections between the rotating part and the support often exist, and when the rotating part rotates on the support, these connections may undesirably wrap around itself, the rotating part, the support or the device Torsion or twisting in other mechanisms that may prevent continuous rotation of the rotating member in one direction, so here a swivel joint is required so that the electrical or fluid inlet port does not rotate with the rotating member. [0003] Conventional ion beam etching processes typically involve tilting and rotating the substrate during etching. In conventional approaches, substrate tilt is used to control the angle of incidence of ions striking the su...

AI Technical Summary

Problems solved by technology

[0005] In the ion beam etching process, if the substrate is added with radio frequency, the rate of coating and etching will be greatly improved. However, the joints that connect the radio frequency current to the substrate in the prior art cannot meet the rotation requirements of the substrate.

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