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METHOD FOR FORMING Si-CONTAINING FILM

A si-si, chemical vapor deposition technology, applied in the field of forming Si-containing films, can solve problems such as thermal damage of semiconductor devices

Inactive Publication Date: 2019-09-27
LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, with the recent diversification of semiconductor production processes, semiconductor devices with fine structures may be thermally damaged during deposition of Si-containing films

Method used

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  • METHOD FOR FORMING Si-CONTAINING FILM
  • METHOD FOR FORMING Si-CONTAINING FILM

Examples

Experimental program
Comparison scheme
Effect test

example 2

[0183] PCDS was used as the first feed gas and pyridine was used as the Lewis base. The chemical vapor deposition process was performed under the conditions listed below to form a film on the substrate. Figure 5 The XPS analysis results of the obtained film are shown.

[0184]

[0185] - Device: use the figure 1 device configured as shown in A long cylindrical chamber (diameter (inner diameter): 48 mm, length: 1,200 mm, made of quartz) was used as the chemical vapor deposition chamber (102).

[0186] -Substrate: SiO 2 and Si (cleaned with HF)

[0187] -Temperature in chemical vapor deposition chamber: 25°C

[0188] - Pressure in chemical vapor deposition chamber: 100 Torr

[0189] - Gas flow: PCDS (2.95sccm), pyridine (5sccm)

[0190] - Deposition time: 30min

[0191] Such as Figure 5 As shown, the obtained film is a Si film having high purity, and the total content ratio of Lewis base-derived carbon atoms and nitrogen atoms in the Si film is 5% or less.

[0192]...

example 3

[0196] PCDS was used as the first feed gas and pyridine was used as the Lewis base. A chemical vapor deposition process was performed under the conditions listed below to form a film on the substrate having the recessed portion. The resulting film was annealed at 400° C. in the presence of oxygen (step (c)). Figure 6 SEM photographs of the obtained films are shown. Figure 7 The XPS analysis results of the obtained film are shown. Note that the content of oxygen-containing impurities in pyridine is 0.01 wt%.

[0197]

[0198] - Device: use the figure 1 device configured as shown in A long cylindrical chamber (diameter (inner diameter): 48 mm, length: 1,200 mm, made of quartz) was used as the chemical vapor deposition chamber (102).

[0199] -Substrate: SiO 2 and Si (cleaned with HF), the aspect ratio of the recess (depth:width=5:1)

[0200] -Temperature in chemical vapor deposition chamber: 25°C

[0201] - Pressure in chemical vapor deposition chamber: 100 Torr

[...

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Abstract

To provide a deposition process whereby a seamless Si-containing film having a small number of voids can be formed on a substrate having a fine trench at a lower temperature. A method for forming an Si-containing film forms an Si-containing film on a substrate by a chemical vapor deposition process, wherein the chemical vapor deposition process includes a step (a) that reacts a first feed gas having one or more Si-Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst.

Description

[technical field] [0001] The present invention relates to a method for forming a Si-containing film. [Background technique] [0002] It is generally impossible to form a Si-containing film using a chemical vapor deposition (CVD) method at a temperature equal to or lower than 400° C. (ie, a Si-containing film can be formed using a CVD method only at a temperature higher than 400° C.). Therefore, with the recent diversification of semiconductor production processes, a semiconductor device having a fine structure may be thermally damaged during deposition of a Si-containing film. [0003] A bottom-up deposition technique in which a film is formed in a state in which fluidity is maintained is known as a method of forming a seamless film with a small number of voids on a substrate with fine grooves at a low temperature while reducing cases in which semiconductor devices are damaged by heat technology. [Content of the invention] [0004] [technical problem] [0005] However, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/04C23C16/24C23C16/32C23C16/40C23C16/56
CPCC23C16/045C23C16/24C23C16/325C23C16/402C23C16/56C23C16/4488C23C16/345C23C16/52H01L21/02164H01L21/02167H01L21/0217H01L21/02271
Inventor 野田直人让-马克·吉拉尔伊凡.奥谢普科夫纪尧姆·迪里厄
Owner LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
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