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Memory system including memory module memory module and operating method of memory module

A technology of memory system and memory module, which is applied in the direction of memory system, static memory, digital memory information, etc.

Pending Publication Date: 2019-10-08
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the difference between the operating characteristics of DRAM as main memory and nonvolatile memory, there may be problems in implementing storage class memory

Method used

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  • Memory system including memory module memory module and operating method of memory module
  • Memory system including memory module memory module and operating method of memory module
  • Memory system including memory module memory module and operating method of memory module

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Embodiment Construction

[0053] It should be noted that although aspects of the inventive concept described for one embodiment may be contained in different embodiments are not specifically described, aspects of the inventive concept described for one embodiment may be contained in different embodiments. in the embodiment. That is, all embodiments and / or features of any embodiment may be combined in any manner and / or combination. These and other objects and / or aspects of the inventive concept are explained in detail in the specification set forth below. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of", when following a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0054] Hereinafter, embodiments of the present inventive concept will be described clearly and in detail with reference to the accompanying drawings to the extent that those...

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Abstract

A semiconductor memory module may include a random access memory, a nonvolatile memory, a buffer memory, and a controller configured to execute a reading operation on the buffer memory in response toan activation of a control signal. The controller may be further configured to execute a flush operation of storing first data, which are stored in the random access memory, in the nonvolatile memory,according to a result of the reading operation.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2018-0035270 filed with the Korean Intellectual Property Office on March 27, 2018, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] Embodiments of the inventive concept relate to a semiconductor memory, and more particularly, to a memory system including a memory module, a memory module, and a method of operating the memory module. Background technique [0003] Semiconductor memory uses semiconductor devices to store data. Semiconductor memories include volatile memories such as dynamic random access memory or static random access memory and nonvolatile memories such as flash memory, phase change memory, ferroelectric memory, magnetic memory, resistive memory, and the like. [0004] Generally, volatile memory supports high-speed random access and is used as the main memory of computing systems such as personal computers, servers, or workstations. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F2003/0697G06F3/0622G06F3/0656G06F3/0658G06F3/0679G06F13/1668G06F2212/1032G06F2212/1008G06F12/0897G06F2212/1004G06F2212/2515G06F2212/205G06F11/073G06F11/0793G06F2201/835G06F11/0757G06F11/0772G06F12/0238G11C11/5628
Inventor 金大正姜志锡高兑京金成峻金玗燮朴赞益申院济庾庸准崔仁寿
Owner SAMSUNG ELECTRONICS CO LTD
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