Method for detecting wafer bonding strength and wafer bonding machine

Abstract

The invention relates to a method for detecting the bonding strength of wafers and a wafer bonding machine, wherein the method for detecting the bonding strength of wafers includes the following steps: placing a first dimension on the surface of the bonding surface of the wafer to be bonded particles; the wafer to be bonded is bonded to another wafer, so that air bubbles are generated between the bonded wafer pair, the position of the bubble corresponds to the placement position of the particle, and the size is the same as that of the wafer The bonding strength is related; the size of the air bubble between the two wafers of the wafer pair is detected, so as to obtain the bonding strength of the two wafers. The method for detecting wafer bonding strength and the wafer bonding machine can be accurately measured without destroying the wafer, avoiding the cost problem caused by destructive measurement, and also has a high cost. measurement accuracy. Moreover, the bonding strength at any position of the wafer can also be measured, not limited to the edge of the wafer, so it is very advantageous in terms of accuracy and cost.

Description

technical field [0001] The invention relates to the field of wafer processing and manufacturing, in particular to a method for detecting wafer bonding strength and a wafer bonding machine. Background technique [0002] Low-temperature wafer direct bonding technology is the most popular bonding method studied in recent years, and it is also the most difficult bonding method that requires the highest surface morphology and surface treatment process of silicon wafers. Poor surface morphology of silicon wafers or Surface treatments can cause irreparable defects in bonded wafer pairs. The process of direct wafer bonding has experienced from the early high-temperature wafer bonding to the low-temperature wafer bonding process that is widely researched and promoted now, mainly to overcome the influence of high temperature on devices, so people began to pay attention to low-temperature wafer bonding. Combined research. The current main research includes hydrophilic bonding and hyd...

AI Technical Summary

Problems solved by technology

The crack length needs to be observed through infrared detection or ultrasonic detection systems. The bonding energy is related to the crack length, blade thickness, wafer thickness, and blade insertion speed, and this method usually only measures the bonding strength at the edge of the wafer. Therefore, it is very unfavorable in terms of accuracy and cost (thin blades will cause serious damage to the wafer and cause the wafer to be scrapped).

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