CMOS image sensor single event latchup effect test method

Abstract

The invention provides a CMOS image sensor single event latchup effect test method. The method is composed of a CMOS image sensor, a CMOS image sensor test board, an FPGA, a PC, a current and voltagemonitoring board and a test system of a power supply. The method can evaluate the single-particle sensitivity of different circuit modules of the CMOS image sensor and analyze specific reasons of latch from the circuit level; in the ground simulation space environment irradiation test, the current and voltage values of different circuit units are collected online in real time, and meanwhile, darkfield images are also collected; and according to dark field images obtained when the latch occurs and the current and voltage changes of the different circuit units, the specific position and circuitmodule where the latch occurs are analyzed. The method is high in real-time performance, and simple and fast, can monitor the single event latchup effect of the CMOS image sensor in real time, meanwhile, can protect the normal operation of the CMOS image sensor after the latch occurs, and can more accurately locate the circuit module of the CMOS image sensor where the single event latchup occurs.

Description

technical field [0001] The invention relates to the technical field of radiation effect detection of electronic devices, and relates to a single-particle latch-up effect test method for a CMOS image sensor. Background technique [0002] Compared with electrically coupled devices, CMOS image sensors have the advantages of high integration, high speed, and low power consumption. Moreover, in recent years, the rapidly developing CMOS image sensor production process has greatly improved the performance of CMOS image sensors, making them comparable to CCD image sensors. Because of these advantages, image sensors based on CMOS manufacturing processes have been applied in the space field, involving star sensors, remote sensing imaging, and earth observation. [0003] When a CMOS image sensor is used in space, protons, neutrons and heavy ions in space will cause single-particle latch-up of the CMOS image sensor, and in severe cases, it will not work properly. Therefore, it is nece...

AI Technical Summary

Problems solved by technology

The existing single-event latch-up test method for CMOS image sensors is mainly by detecting the change of the total current of the CMOS image sensor. This method can evaluate the overall sensitivity of the CMOS image sensor to single-event latch-up. The circuit unit is sensitive to single event latch-up, and it is impossible to analyze the cause of latch-up from the circuit level

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