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Method for manufacturing semiconductor three-dimensional Hall sensor suitable for high-temperature working environment

A Hall sensor, working environment technology, applied in the direction of instruments, single equipment manufacturing, measuring devices, etc., can solve the problems of the multi-dimensional Hall sensor system is bulky, complex chip layout, unable to work normally, etc., to improve the measurement sensitivity, volume Small, good chemical stability effect

Active Publication Date: 2019-10-25
DALIAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0014] In order to solve the problems in the prior art that the multi-dimensional Hall sensor system is bulky and the chip layout is complex, resulting in difficult packaging, high cost and failure to work normally in an environment with too high temperature, the present invention provides a sensor suitable for high temperature working environment. A semiconductor three-dimensional Hall sensor and a manufacturing method thereof, the three-dimensional Hall sensor has a small volume, a simple manufacturing process, and can work normally in a high temperature environment

Method used

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  • Method for manufacturing semiconductor three-dimensional Hall sensor suitable for high-temperature working environment
  • Method for manufacturing semiconductor three-dimensional Hall sensor suitable for high-temperature working environment
  • Method for manufacturing semiconductor three-dimensional Hall sensor suitable for high-temperature working environment

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Embodiment 1

[0045] Such as Figure 4 As shown, wide bandgap semiconductor materials such as SiC or GaN are used, and 5 main electrodes and 8 Hall sensing electrodes are designed and fabricated on the surface of the material, and the metal / semiconductor contact type is ohmic contact. Among them, the 5 main electrodes are 1 central current inflow electrode (B) and 4 current outflow electrodes (B X1 , B X2 , B Z1 and B Z2 ), the 8 Hall sensing electrodes are X 1 ~X 4 and Z 1 ~ Z 4 , where two pairs of Hall sensing electrodes X 1 、X 2 and x 3 、X 4 Measure two magnetic field components in space (X and Z directions), and the remaining four Hall sensing electrodes Z 1 ~ Z 4 Measure the third magnetic field component (Y direction).

[0046] Using insulating layers ①, ②, ③ and ④ embedded between the Hall sensing electrodes, the insulating layer material can be SiO 2 、Si 3 N 4 、Al 2 o 3 etc., using this technology can effectively guide the sensing current direction while significa...

Embodiment 2

[0066] In this embodiment, the intrinsic GaN material is used, and the background carrier concentration of the material is 5×10 15 cm -3 , the insulating layer material used is Si 3 N 4 . The three main electrodes B and B of the device chip X1 , B X2 The size is 40μm×10μm, and the remaining two main electrodes B Z1 , B Z2 The size is 10μm×10μm, Hall sensing electrode Z 1 ~ Z 4 、X 1 ~X 4 The size is 10μm×10μm, the size of each embedded isolation insulating layer is 40μm×60μm, and the Hall sensing electrode X 1 、X 2 The distance between the center and the center of the center main electrode B is 45 μm, and the Hall sensing electrode X 3 、X 4 The distance between the center and the center of the center main electrode B is 30 μm, and the main electrode B Z1 , B Z2 The distance between the center and the center of the center main electrode B is 75 μm, and the main electrode B X1 , B X2 The distance between the center and the center of the center main electrode B is...

Embodiment 3

[0074] As a separate embodiment or as a supplement to Embodiment 1, the central current flowing into the electrode B adopts a circular or rectangular shape; the current flowing out of the electrode B X1 , B X2 , B Z1 , B Z2 Rectangular shape is preferred for the eight Hall sensing electrodes, and circular shape can also be used.

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Abstract

The invention relates to a method for manufacturing a semiconductor three-dimensional Hall sensor suitable for a high-temperature working environment, belonging to the field of semiconductor magneticsensors. The technical solution is that all main electrodes and sensing electrodes of the three-dimensional Hall sensor are integrated on the surface of a single semiconductor material, each electroderegion is defined by the photolithography technology and an electrode deposition window is formed, a multilayer metal film ohmic contact electrode is grown by using a common metal deposition technique, and the alloy annealing process is optimized to form metal / semiconductor ohmic contact. The method has the advantages that the electrode regions are effectively isolated, the measurement sensitivity of a device can be improved while the leakage current of the device is effectively suppressed, since the spatial three-dimensional magnetic field detection can be realized in the same semiconductor,a Hall sensor chip in the invention has advantages of simple package, small size and low cost, and the sensor can work normally in an environment with high temperature above 300 DEG C and other extreme environments such as high pressure and high radiation and still maintain good linearity.

Description

[0001] This application is a divisional application of the invention patent application with the application number 201711375441.X and the application date is December 19, 2017, and the invention name is a semiconductor three-dimensional Hall sensor suitable for high-temperature working environment and its manufacturing method. technical field [0002] The invention belongs to the field of three-dimensional Hall sensors, and in particular relates to a method for manufacturing a semiconductor three-dimensional Hall sensor suitable for high-temperature working environments. Background technique [0003] One-dimensional Hall sensors are divided into horizontal type and vertical type. The typical horizontal type device is cross-shaped, and its structure is as follows figure 1 As shown, there are four identical and symmetrical electrodes C1-C4. An excitation current source is applied to C2 between C1. If there is a magnetic field in the upward direction perpendicular to the devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/00G01R33/07
CPCG01R33/0052G01R33/07
Inventor 黄火林
Owner DALIAN UNIV OF TECH
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