Flat panel detector and manufacturing method thereof

Abstract

The invention provides a flat panel detector and a manufacturing method thereof. The flat panel detector comprises a TFT device with a semiconductor layer, a first insulating layer covering the TFT device, an interlayer insulating layer on the first insulating layer, a cathode electrode which is located on the interlayer insulating layer and connected with the TFT device, and a photoelectric conversion layer located on the cathode electrode. The flat panel detector further comprises a barrier layer on the interlayer insulating layer. At least part of the barrier layer is in a floating state, and at least part of the barrier layer is located directly above the semiconductor layer. According to the invention, the barrier layer is arranged on the flat panel detector; at least part of the barrier layer is located directly above the semiconductor layer; and the barrier layer can block the influence of hydrogen diffusion on the semiconductor layer when the photoelectric conversion layer is formed, and can block the influence of X-ray or ambient light on the semiconductor layer.

Description

technical field [0001] The present invention relates to the technical field of flat panel detectors, in particular to a flat panel detector and a manufacturing method thereof. Background technique [0002] The X-ray of the flat-panel detector is first converted into visible light by the fluorescent medium material, and then the visible light signal is converted into an electrical signal by the photosensitive element, and finally the analog electrical signal is converted into a digital signal by A / D. [0003] Such as figure 1 As shown, the flat panel detector includes a gate 10, a gate insulating layer 20 covering the gate 10, a semiconductor layer 30 on the gate insulating layer 20, an etching barrier layer 40 covering the semiconductor layer 30, and an etching barrier layer passing through the gate insulating layer 20. The source electrode 51 and the drain electrode 52 of the layer 40 are both in contact with the semiconductor layer 30, the first insulating layer 60 coveri...

AI Technical Summary

Problems solved by technology

In the process of making the photoelectric conversion layer 90, a large amount of hydrogen gas is needed. If the hydrogen ions diffuse into the semiconductor layer 30, in severe cases, the TFT device will fail.

[0005] The flat-panel detector needs to place the detection panel under X-ray or visible light for irradiation, and the ambient light is irradiated on the semiconductor layer 30, the TFT leakage current increases due to the light, Vth drifts, the detection sensitivity of the photodetector is reduced, and the noise interference is increased

Images