Grounding ring, chamber, and physical vapor deposition apparatus

Abstract

The present disclosure provides a grounding ring, a chamber, and a physical vapor deposition apparatus. The grounding ring includes a first conductive ring, a second conductive ring, and a plurality of elastic devices electrically connecting the first conductive ring and the second conductive ring, wherein a first central axis of the first conductive ring is parallel to or coincident with a secondcentral axis of the second conductive ring, and the plurality of elastic devices are configured such that the first conductive ring and the second conductive ring can move relative to each other in adirection of the first central axis. The elastic devices in the grounding ring may expand the adjustment range between the first conductive ring and the second conductive ring.

Description

technical field [0001] Embodiments of the present disclosure relate to a ground ring, a chamber, and a physical vapor deposition apparatus. Background technique [0002] In the integrated circuit manufacturing process, the Physical Vapor Deposition (Physical Vapor Deposition, PVD) method is widely used because of its better film consistency, uniformity and wider process window, and it can realize through-hole filling with high aspect ratio. Deposit many different layers of metal, hardmask, and other related material layers. However, if the physical vapor deposition sputtering equipment is to achieve the deposition of high-density TiN, other metal and metal compound high-density thin films, it needs to adjust the process parameters in many aspects, and if necessary, it is necessary to increase the hardware configuration to achieve the process goals to meet more advanced requirements. The needs of integrated circuit technology. [0003] Conventional DC sputtering equipment i...

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Problems solved by technology

[0003] Conventional DC sputtering equipment is difficult to meet the needs of more advanced proces

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