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PERC battery cleaning and texturing process and system

A process and battery technology, applied in the field of PERC battery cleaning and texturing process and system, can solve the problems of reducing the type and amount of chemicals used, reducing the overall time of the cleaning and texturing process, and uniform pyramid size, etc., to achieve types and Less usage, shorter overall time, uniform effect

Pending Publication Date: 2019-11-05
QINGHAI HUANGHE HYDROPOWER DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problems to be solved in the present invention are: how to avoid the problem of silicon wafer suede dirtying in the PERC cell texturing process; how to make the prepared pyramid size uniform and the suede surface reflectivity low; The overall time of the cashmere process and the problem of reducing the type and amount of chemicals used

Method used

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  • PERC battery cleaning and texturing process and system
  • PERC battery cleaning and texturing process and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Such as figure 1 Shown, a kind of PERC cell cleaning texturing process comprises the following steps:

[0035] Step (1), put the original silicon wafer into the pickling tank for pre-acid cleaning treatment. Wherein, the volume concentration of HF is 5%. The volume concentration of HCL is 5%, and the rest is pure water. The temperature of acid cleaning is 20°C, the time of acid cleaning is 60S, and circular bubbling is carried out at the same time.

[0036] Step (2), putting the silicon chip pickled in step (1) into the first pure water cleaning tank for pure water cleaning. The pure water cleaning time is 60S, and the temperature is 25°C.

[0037] Step (3), performing the first ozone water cleaning treatment on the silicon wafer after step (2) cleaning with pure water in the ozone water washing tank. The ozone concentration in the ozone water cleaning tank was 25 ppm. The temperature is 20°C, and the washing time with ozone water is 150S.

[0038] In step (4), t...

Embodiment 2

[0052] A PERC battery cleaning and texturing process, comprising the following steps:

[0053] Step (1), put the original silicon wafer into the pickling tank for pre-acid cleaning treatment. The volume concentration of HF is 5%. The volume concentration of HCL is 5%, and the rest is pure water. The temperature of the acid cleaning is 20°C, the time of the acid cleaning is 60S, and circular bubbling is carried out at the same time.

[0054] Step (2), putting the silicon chip pickled in step (1) into the first pure water cleaning tank for pure water cleaning. The pure water cleaning time is 60s, and the temperature is 25°C.

[0055] Step (3), performing the first ozone water cleaning treatment on the silicon wafer after step (2) cleaning with pure water in the ozone water washing tank. The ozone concentration in the ozone water cleaning tank is 30ppm; the temperature is 20°C, and the ozone water cleaning time is 200S.

[0056] In step (4), the silicon wafers cleaned with o...

Embodiment 3

[0069] A PERC battery cleaning and texturing process, comprising the following steps:

[0070] Step (1), put the original silicon wafer into the pickling tank for pre-acid cleaning treatment. The volume concentration of HF is 5%. The volume concentration of HCL is 5%, and the rest is pure water. The temperature of acid cleaning is 20°C, the time of acid cleaning is 60S, and circular bubbling is carried out at the same time.

[0071] Step (2), putting the silicon chip pickled in step (1) into the first pure water cleaning tank for pure water cleaning. The pure water cleaning time is 60S, and the temperature is 25°C.

[0072] Step (3), performing the first ozone water cleaning treatment on the silicon wafer after step (2) cleaning with pure water in the ozone water washing tank. The ozone concentration in the ozone water cleaning tank is 35ppm; the temperature is 20°C, and the ozone water cleaning time is 240S.

[0073] In step (4), the silicon wafers cleaned with ozone wat...

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Abstract

The invention discloses a PERC battery cleaning and texturing process. A silicon wafer is pre-cleaned with acid, cleaned with pure water, cleaned with ozone water, roughly polished, cleaned with purewater, cleaned with ozone water, textured, cleaned with pure water, cleaned with ozone water, cleaned with pure water, post-cleaned with acid, cleaned with pure water, slowly lifted and dried in sequence. Because the silicon wafer is treated step by step with acid solution, ozone water and pure water, the problem that the white spots, tooth marks and dirt on the textured surface of the silicon wafer cannot be cleaned in the process of PERC battery texturing can be solved. The pyramids are of uniform size, and the reflectivity of the textured surface is low. The overall time of the cleaning andtexturing process is shortened, the energy consumption is reduced, and the output is increased. Moreover, the number of types of chemicals and the amount of chemicals used are small, and some environmental pollution problems are solved.

Description

technical field [0001] The invention relates to a PERC cell cleaning and texturing process and system, belonging to the technical field of crystalline silicon solar cell manufacturing. Background technique [0002] Surface texturing is the first step in the manufacturing process of PERC cells, and it is an important process link to improve the absorption of incident light and match the subsequent processes. It is very important to improve the conversion efficiency of PERC cells. At present, the cleaning and texturing of PERC cells in industrial production mainly uses chemical wet etching. That is to use a mixed solution of acids and alkalis to clean the silicon wafers and anisotropic corrosion of the alkali to etch the silicon wafers. However, the method for cleaning texture has the following disadvantages: for example, appearance problems such as white spots, tooth marks, dirty cleaning, etc. appear on the textured surface of the silicon wafer. At the same time, there ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/186H01L31/02363Y02P70/50
Inventor 常纪鹏张志郢何凤琴陈燕杨超王冬冬张敏李得银
Owner QINGHAI HUANGHE HYDROPOWER DEV
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