Unlock instant, AI-driven research and patent intelligence for your innovation.

A device life prediction method, device, vehicle and storage medium

A device life and prediction method technology, which is applied in the fields of vehicles and storage media, devices, and device life prediction methods, can solve problems such as car crashes, IGBR fatigue, and difficulty in realizing complete vehicles, and achieve the effect of improving driving safety

Active Publication Date: 2022-01-04
CHINA FIRST AUTOMOBILE
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When the IGBT is working normally, due to the impact of the transient electrothermal load, it will bring greater continuous fatigue to the IGBR, which will affect the life of the IGBT. The life expectancy of the
In today's existing technology, sensors are often used to detect IGBTs, and then complex calculations are performed based on measurement data, resulting in that the accuracy of IGBT predictions cannot meet the requirements, and the data measurement conditions are harsh and difficult to achieve in the entire vehicle.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A device life prediction method, device, vehicle and storage medium
  • A device life prediction method, device, vehicle and storage medium
  • A device life prediction method, device, vehicle and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] figure 1 It is a flow chart of a device life prediction method provided in Embodiment 1 of the present invention; the embodiment of the present invention is applicable to the situation of life prediction of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) in a vehicle, the method It can be performed by a device life prediction device, which can be implemented in hardware and / or software, and the method in the embodiment of the present invention specifically includes:

[0029] Step 101. Obtain at least one junction temperature data of a device according to a preset rule.

[0030] Wherein, the preset rule may be a pre-set rule for obtaining device junction temperature data, which may include directly measuring device junction temperature data according to a sensor, and may also determine the device Junction temperature data, junction temperature data can be used for the actual operating temperature of standard devices in normal operating con...

Embodiment 2

[0040] figure 2 It is a flow chart of a device lifetime prediction method provided in Embodiment 2 of the present invention. This embodiment is embodied on the basis of the above-mentioned embodiments. The method of the embodiment of the present invention includes:

[0041] Step 201, acquiring the operating parameters of the working state of the device.

[0042] Among them, the working state can be that the device is in the working state of converting direct current into alternating current. At this time, parameters such as the input DC bus voltage and output phase current of the device can be obtained. The operating parameters can be the parameters of the standard operating state of the device, which can include the input DC Bus voltage and output phase current etc.

[0043] In the embodiment of the present invention, the sensor can be used to obtain the relevant parameters of the device when it is running, and can be measured at the input and output of the device. It can b...

Embodiment 3

[0061] Figure 5 It is a flow chart of a device life prediction method provided by Embodiment 3 of the present invention. The embodiment of the present invention is embodied on the basis of the above-mentioned embodiments. In this embodiment, the junction temperature correlation table includes a low-frequency junction temperature correlation table and a high-temperature Junction temperature correlation table, correspondingly, the method provided by the embodiment of the present invention includes:

[0062] Step 301. Obtain the operating parameters of the working state of the device, the operating parameters include switching frequency, DC bus voltage, output phase current and output electrical frequency.

[0063] Wherein, the switching frequency may be the frequency at which the device operates, the DC bus voltage may be the voltage of the DC input from the device, the output phase current may be the current of the AC output from the device, and the output frequency may be the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a device life prediction method, device, vehicle and storage medium. Acquiring at least one junction temperature data of the device according to a preset rule; determining the life loss of the device according to each of the junction temperature data; predicting the life of the device according to the life loss and historical life loss. The method provided by the embodiment of the present invention reduces the calculation amount of life prediction, improves the accuracy of device life prediction, and can improve vehicle driving safety.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of device lifetime prediction, and in particular, to a device lifetime prediction method, device, vehicle, and storage medium. Background technique [0002] The electric drive system is the powertrain of an electric vehicle, in which the energy conversion is realized through the inverter, and the direct current measured by the power supply is converted into the alternating current used by the respective vehicle components. The core key device in the inverter is the insulated gate bipolar transistor ( Insulated Gate Bipolar Transistor (IGBT) converts the DC power at the input end into AC power. The device characteristics of the IGBT affect the power, comfort and reliability of the electric motor, and play a pivotal role. [0003] When the IGBT is working normally, due to the impact of the transient electrothermal load, it will bring greater continuous fatigue to the IGBR, which will ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2642
Inventor 刘志强李敏文彦东刘佳男钟华赵慧超
Owner CHINA FIRST AUTOMOBILE