High power density gan synchronous rectification point-of-load power module

Abstract

The invention discloses a high-power-density GaN synchronous rectification load point power module, which comprises a PWM controller, four grid drive circuits, four GaN power switch tubes, four current-limiting resistors, a transformer, an output capacitor, an output inductor, a detection circuit and a feedback circuit. In order to achieve lower output voltage and voltage drop ratio, the high-power-density GaN synchronous rectification load point power module adopts a two-stage converter structure; in order to increase output current, the high-power-density GaN synchronous rectification load point power module adopts double-buck interleaved parallel output; in order to increase frequency and power density, the high-power-density GaN synchronous rectification load point power module adoptsa multi-tube parallel LGA package GaN power switch to carry out switch conversion; and a two-sided layout structure is adopted to optimize the layout of a grid drive, multi-tube parallel GaN devices and a voltage bus, and high-density power integration and high efficiency can be achieved by ensuring that the GaN devices work in a safe region state.

Description

technical field [0001] The invention relates to a high power density GaN synchronous rectification point-of-load power supply module for a new generation communication system, belonging to the technical field of power supplies. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gat...

AI Technical Summary

Problems solved by technology

[0008] However, to increase the power density by increasing the switching frequency, we need to face two bottlenecks: one is that the current of the switching branch changes very rapidly and the di / dt is very high during the switching process of the GaN device. Parasitic inductance, when the current changes rapidly, can generate high spike overvoltage across the switching device

If the wiring is not optimized enough and the parasitic inductance is large, it will directly affect the normal operation of the circuit

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